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NP89N04MUK-S18-AY

NP89N04MUK-S18-AY

For Reference Only

Part Number NP89N04MUK-S18-AY
PNEDA Part # NP89N04MUK-S18-AY
Description MOSFET N-CH 40V 89A TO-220
Manufacturer Renesas Electronics America
Unit Price Request a Quote
In Stock 2,934
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 24 - Jun 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NP89N04MUK-S18-AY Resources

Brand Renesas Electronics America
ECAD Module ECAD
Mfr. Part NumberNP89N04MUK-S18-AY
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NP89N04MUK-S18-AY, NP89N04MUK-S18-AY Datasheet (Total Pages: 8, Size: 260.7 KB)
PDFNP89N04NUK-S18-AY Datasheet Cover
NP89N04NUK-S18-AY Datasheet Page 2 NP89N04NUK-S18-AY Datasheet Page 3 NP89N04NUK-S18-AY Datasheet Page 4 NP89N04NUK-S18-AY Datasheet Page 5 NP89N04NUK-S18-AY Datasheet Page 6 NP89N04NUK-S18-AY Datasheet Page 7 NP89N04NUK-S18-AY Datasheet Page 8

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NP89N04MUK-S18-AY Specifications

ManufacturerRenesas Electronics America
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C90A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs3.3mOhm @ 45A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs102nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds5850pF @ 25V
FET Feature-
Power Dissipation (Max)1.8W (Ta), 147W (Tc)
Operating Temperature175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220
Package / CaseTO-220-3 Full Pack

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