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NP90N03VHG-E1-AY

NP90N03VHG-E1-AY

For Reference Only

Part Number NP90N03VHG-E1-AY
PNEDA Part # NP90N03VHG-E1-AY
Description MOSFET N-CH 30V 90A TO-252
Manufacturer Renesas Electronics America
Unit Price Request a Quote
In Stock 2,394
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 25 - Jun 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NP90N03VHG-E1-AY Resources

Brand Renesas Electronics America
ECAD Module ECAD
Mfr. Part NumberNP90N03VHG-E1-AY
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NP90N03VHG-E1-AY, NP90N03VHG-E1-AY Datasheet (Total Pages: 8, Size: 220.48 KB)
PDFNP90N03VHG-E1-AY Datasheet Cover
NP90N03VHG-E1-AY Datasheet Page 2 NP90N03VHG-E1-AY Datasheet Page 3 NP90N03VHG-E1-AY Datasheet Page 4 NP90N03VHG-E1-AY Datasheet Page 5 NP90N03VHG-E1-AY Datasheet Page 6 NP90N03VHG-E1-AY Datasheet Page 7 NP90N03VHG-E1-AY Datasheet Page 8

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NP90N03VHG-E1-AY Specifications

ManufacturerRenesas Electronics America
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C90A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs3.2mOhm @ 45A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs135nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds7500pF @ 25V
FET Feature-
Power Dissipation (Max)1.2W (Ta), 105W (Tc)
Operating Temperature175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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