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NS8BTHE3_A/P

NS8BTHE3_A/P

For Reference Only

Part Number NS8BTHE3_A/P
PNEDA Part # NS8BTHE3_A-P
Description DIODE GEN PURP 100V 8A TO220AC
Manufacturer Vishay Semiconductor Diodes Division
Unit Price Request a Quote
In Stock 2,178
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 27 - Jul 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NS8BTHE3_A/P Resources

Brand Vishay Semiconductor Diodes Division
ECAD Module ECAD
Mfr. Part NumberNS8BTHE3_A/P
CategorySemiconductorsDiodes & RectifiersRectifiers - Single
Datasheet
NS8BTHE3_A/P, NS8BTHE3_A/P Datasheet (Total Pages: 5, Size: 140.64 KB)
PDFNS8KT-7002HE3/45 Datasheet Cover
NS8KT-7002HE3/45 Datasheet Page 2 NS8KT-7002HE3/45 Datasheet Page 3 NS8KT-7002HE3/45 Datasheet Page 4 NS8KT-7002HE3/45 Datasheet Page 5

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NS8BTHE3_A/P Specifications

ManufacturerVishay Semiconductor Diodes Division
SeriesAutomotive, AEC-Q101
Diode TypeStandard
Voltage - DC Reverse (Vr) (Max)100V
Current - Average Rectified (Io)8A
Voltage - Forward (Vf) (Max) @ If1.1V @ 8A
SpeedStandard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr)-
Current - Reverse Leakage @ Vr10µA @ 100V
Capacitance @ Vr, F55pF @ 4V, 1MHz
Mounting TypeThrough Hole
Package / CaseTO-220-2
Supplier Device PackageTO-220AC
Operating Temperature - Junction-55°C ~ 150°C

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