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NSB8KTHE3_A/I

NSB8KTHE3_A/I

For Reference Only

Part Number NSB8KTHE3_A/I
PNEDA Part # NSB8KTHE3_A-I
Description DIODE GEN PURP 800V 8A TO263AB
Manufacturer Vishay Semiconductor Diodes Division
Unit Price Request a Quote
In Stock 2,772
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 13 - Jun 18 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NSB8KTHE3_A/I Resources

Brand Vishay Semiconductor Diodes Division
ECAD Module ECAD
Mfr. Part NumberNSB8KTHE3_A/I
CategorySemiconductorsDiodes & RectifiersRectifiers - Single
Datasheet
NSB8KTHE3_A/I, NSB8KTHE3_A/I Datasheet (Total Pages: 5, Size: 140.64 KB)
PDFNS8KT-7002HE3/45 Datasheet Cover
NS8KT-7002HE3/45 Datasheet Page 2 NS8KT-7002HE3/45 Datasheet Page 3 NS8KT-7002HE3/45 Datasheet Page 4 NS8KT-7002HE3/45 Datasheet Page 5

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NSB8KTHE3_A/I Specifications

ManufacturerVishay Semiconductor Diodes Division
SeriesAutomotive, AEC-Q101
Diode TypeStandard
Voltage - DC Reverse (Vr) (Max)800V
Current - Average Rectified (Io)8A
Voltage - Forward (Vf) (Max) @ If1.1V @ 8A
SpeedStandard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr)-
Current - Reverse Leakage @ Vr10µA @ 800V
Capacitance @ Vr, F55pF @ 4V, 1MHz
Mounting TypeSurface Mount
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackageTO-263AB
Operating Temperature - Junction-55°C ~ 150°C

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