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NSBA114EDP6T5G

NSBA114EDP6T5G

For Reference Only

Part Number NSBA114EDP6T5G
PNEDA Part # NSBA114EDP6T5G
Description TRANS 2PNP PREBIAS 0.338W SOT963
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 2,700
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 13 - Jun 18 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NSBA114EDP6T5G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNSBA114EDP6T5G
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - Arrays, Pre-Biased
Datasheet
NSBA114EDP6T5G, NSBA114EDP6T5G Datasheet (Total Pages: 8, Size: 124.76 KB)
PDFNSVBA114EDXV6T1G Datasheet Cover
NSVBA114EDXV6T1G Datasheet Page 2 NSVBA114EDXV6T1G Datasheet Page 3 NSVBA114EDXV6T1G Datasheet Page 4 NSVBA114EDXV6T1G Datasheet Page 5 NSVBA114EDXV6T1G Datasheet Page 6 NSVBA114EDXV6T1G Datasheet Page 7 NSVBA114EDXV6T1G Datasheet Page 8

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NSBA114EDP6T5G Specifications

ManufacturerON Semiconductor
Series-
Transistor Type2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1)10kOhms
Resistor - Emitter Base (R2)10kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce35 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic250mV @ 300µA, 10mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition-
Power - Max338mW
Mounting TypeSurface Mount
Package / CaseSOT-963
Supplier Device PackageSOT-963

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Supplier Device Package

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