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NSBA114EDXV6T5G

NSBA114EDXV6T5G

For Reference Only

Part Number NSBA114EDXV6T5G
PNEDA Part # NSBA114EDXV6T5G
Description TRANS 2PNP PREBIAS 0.5W SOT563
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 3,472
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 13 - Jun 18 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NSBA114EDXV6T5G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNSBA114EDXV6T5G
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - Arrays, Pre-Biased
Datasheet
NSBA114EDXV6T5G, NSBA114EDXV6T5G Datasheet (Total Pages: 12, Size: 132.54 KB)
PDFNSBA143ZDXV6T5G Datasheet Cover
NSBA143ZDXV6T5G Datasheet Page 2 NSBA143ZDXV6T5G Datasheet Page 3 NSBA143ZDXV6T5G Datasheet Page 4 NSBA143ZDXV6T5G Datasheet Page 5 NSBA143ZDXV6T5G Datasheet Page 6 NSBA143ZDXV6T5G Datasheet Page 7 NSBA143ZDXV6T5G Datasheet Page 8 NSBA143ZDXV6T5G Datasheet Page 9 NSBA143ZDXV6T5G Datasheet Page 10 NSBA143ZDXV6T5G Datasheet Page 11

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NSBA114EDXV6T5G Specifications

ManufacturerON Semiconductor
Series-
Transistor Type2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1)10kOhms
Resistor - Emitter Base (R2)10kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce35 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic250mV @ 300µA, 10mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition-
Power - Max500mW
Mounting TypeSurface Mount
Package / CaseSOT-563, SOT-666
Supplier Device PackageSOT-563

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