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NSBC114YPDP6T5G

NSBC114YPDP6T5G

For Reference Only

Part Number NSBC114YPDP6T5G
PNEDA Part # NSBC114YPDP6T5G
Description TRANS NPN/PNP PREBIAS SOT963
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 65,238
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 13 - Jun 18 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NSBC114YPDP6T5G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNSBC114YPDP6T5G
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - Arrays, Pre-Biased
Datasheet
NSBC114YPDP6T5G, NSBC114YPDP6T5G Datasheet (Total Pages: 10, Size: 135.88 KB)
PDFNSVB114YPDXV6T1G Datasheet Cover
NSVB114YPDXV6T1G Datasheet Page 2 NSVB114YPDXV6T1G Datasheet Page 3 NSVB114YPDXV6T1G Datasheet Page 4 NSVB114YPDXV6T1G Datasheet Page 5 NSVB114YPDXV6T1G Datasheet Page 6 NSVB114YPDXV6T1G Datasheet Page 7 NSVB114YPDXV6T1G Datasheet Page 8 NSVB114YPDXV6T1G Datasheet Page 9 NSVB114YPDXV6T1G Datasheet Page 10

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NSBC114YPDP6T5G Specifications

ManufacturerON Semiconductor
Series-
Transistor Type1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1)10kOhms
Resistor - Emitter Base (R2)47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic250mV @ 300µA, 10mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition-
Power - Max339mW
Mounting TypeSurface Mount
Package / CaseSOT-963
Supplier Device PackageSOT-963

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