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NSBC143EPDXV6T1G

NSBC143EPDXV6T1G

For Reference Only

Part Number NSBC143EPDXV6T1G
PNEDA Part # NSBC143EPDXV6T1G
Description TRANS PREBIAS NPN/PNP SOT563
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 8,406
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NSBC143EPDXV6T1G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNSBC143EPDXV6T1G
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - Arrays, Pre-Biased
Datasheet
NSBC143EPDXV6T1G, NSBC143EPDXV6T1G Datasheet (Total Pages: 10, Size: 164.07 KB)
PDFMUN5332DW1T1G Datasheet Cover
MUN5332DW1T1G Datasheet Page 2 MUN5332DW1T1G Datasheet Page 3 MUN5332DW1T1G Datasheet Page 4 MUN5332DW1T1G Datasheet Page 5 MUN5332DW1T1G Datasheet Page 6 MUN5332DW1T1G Datasheet Page 7 MUN5332DW1T1G Datasheet Page 8 MUN5332DW1T1G Datasheet Page 9 MUN5332DW1T1G Datasheet Page 10

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NSBC143EPDXV6T1G Specifications

ManufacturerON Semiconductor
Series-
Transistor Type1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1)4.7kOhms
Resistor - Emitter Base (R2)4.7kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce15 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic250mV @ 1mA, 10mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition-
Power - Max500mW
Mounting TypeSurface Mount
Package / CaseSOT-563, SOT-666
Supplier Device PackageSOT-563

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