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NSS60200SMTTBG

NSS60200SMTTBG

For Reference Only

Part Number NSS60200SMTTBG
PNEDA Part # NSS60200SMTTBG
Description TRANS PNP 60V 2A 6WDFN
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 6,840
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 8 - May 13 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NSS60200SMTTBG Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNSS60200SMTTBG
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - Single

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NSS60200SMTTBG Specifications

ManufacturerON Semiconductor
Series*
Transistor Type-
Current - Collector (Ic) (Max)-
Voltage - Collector Emitter Breakdown (Max)-
Vce Saturation (Max) @ Ib, Ic-
Current - Collector Cutoff (Max)-
DC Current Gain (hFE) (Min) @ Ic, Vce-
Power - Max-
Frequency - Transition-
Operating Temperature-
Mounting Type-
Package / Case-
Supplier Device Package-

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Current - Collector (Ic) (Max)

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Voltage - Collector Emitter Breakdown (Max)

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Vce Saturation (Max) @ Ib, Ic

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Current - Collector Cutoff (Max)

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DC Current Gain (hFE) (Min) @ Ic, Vce

160 @ 100mA, 1V

Power - Max

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Frequency - Transition

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Operating Temperature

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Mounting Type

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Supplier Device Package

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Current - Collector (Ic) (Max)

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Voltage - Collector Emitter Breakdown (Max)

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Vce Saturation (Max) @ Ib, Ic

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Current - Collector Cutoff (Max)

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DC Current Gain (hFE) (Min) @ Ic, Vce

180 @ 1mA, 6V

Power - Max

150mW

Frequency - Transition

100MHz

Operating Temperature

150°C (TJ)

Mounting Type

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Package / Case

SC-75, SOT-416

Supplier Device Package

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Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

Transistor Type

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Current - Collector (Ic) (Max)

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Voltage - Collector Emitter Breakdown (Max)

50V

Vce Saturation (Max) @ Ib, Ic

500mV @ 50mA, 1A

Current - Collector Cutoff (Max)

1µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

70 @ 500mA, 2V

Power - Max

900mW

Frequency - Transition

100MHz

Operating Temperature

150°C (TJ)

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Package / Case

TO-226-3, TO-92-3 Long Body

Supplier Device Package

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Toshiba Semiconductor and Storage

Manufacturer

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Series

-

Transistor Type

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Current - Collector (Ic) (Max)

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Voltage - Collector Emitter Breakdown (Max)

375V

Vce Saturation (Max) @ Ib, Ic

1V @ 100mA, 800mA

Current - Collector Cutoff (Max)

100µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

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Power - Max

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Frequency - Transition

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ON Semiconductor

Manufacturer

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Series

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Transistor Type

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Current - Collector (Ic) (Max)

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Voltage - Collector Emitter Breakdown (Max)

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Vce Saturation (Max) @ Ib, Ic

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Current - Collector Cutoff (Max)

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DC Current Gain (hFE) (Min) @ Ic, Vce

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Power - Max

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Frequency - Transition

100MHz

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Supplier Device Package

SOT-23-3 (TO-236)

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