NSVBAWH56WT1G
For Reference Only
| Part Number | NSVBAWH56WT1G |
| PNEDA Part # | NSVBAWH56WT1G |
| Description | 70V ANODE SWITCH DIODE |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 3,996 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 14 - Jun 19 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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NSVBAWH56WT1G Resources
| Brand | ON Semiconductor |
| ECAD Module |
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| Mfr. Part Number | NSVBAWH56WT1G |
| Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Single |
| Datasheet |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
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NSVBAWH56WT1G Specifications
| Manufacturer | ON Semiconductor |
| Series | * |
| Diode Type | - |
| Voltage - DC Reverse (Vr) (Max) | - |
| Current - Average Rectified (Io) | - |
| Voltage - Forward (Vf) (Max) @ If | - |
| Speed | - |
| Reverse Recovery Time (trr) | - |
| Current - Reverse Leakage @ Vr | - |
| Capacitance @ Vr, F | - |
| Mounting Type | - |
| Package / Case | - |
| Supplier Device Package | - |
| Operating Temperature - Junction | - |
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Manufacturer Diodes Incorporated Series * Diode Type - Voltage - DC Reverse (Vr) (Max) - Current - Average Rectified (Io) - Voltage - Forward (Vf) (Max) @ If - Speed - Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr - Capacitance @ Vr, F - Mounting Type - Package / Case - Supplier Device Package - Operating Temperature - Junction - |
Manufacturer STMicroelectronics Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 200V Current - Average Rectified (Io) 4A Voltage - Forward (Vf) (Max) @ If 1.25V @ 12A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 35ns Current - Reverse Leakage @ Vr 10µA @ 200V Capacitance @ Vr, F - Mounting Type Surface Mount Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package DPAK Operating Temperature - Junction 150°C (Max) |
Manufacturer Global Power Technologies Group Series Amp+™ Diode Type Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max) 1200V Current - Average Rectified (Io) 50A (DC) Voltage - Forward (Vf) (Max) @ If 1.7V @ 50A Speed No Recovery Time > 500mA (Io) Reverse Recovery Time (trr) 0ns Current - Reverse Leakage @ Vr 100µA @ 1200V Capacitance @ Vr, F 2984pF @ 1V, 1MHz Mounting Type Through Hole Package / Case TO-247-2 Supplier Device Package TO-247-2 Operating Temperature - Junction -55°C ~ 135°C |
