NSVBAWH56WT1G
For Reference Only
| Part Number | NSVBAWH56WT1G |
| PNEDA Part # | NSVBAWH56WT1G |
| Description | 70V ANODE SWITCH DIODE |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 3,996 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 13 - Jun 18 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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NSVBAWH56WT1G Resources
| Brand | ON Semiconductor |
| ECAD Module |
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| Mfr. Part Number | NSVBAWH56WT1G |
| Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Single |
| Datasheet |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
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Notes
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NSVBAWH56WT1G Specifications
| Manufacturer | ON Semiconductor |
| Series | * |
| Diode Type | - |
| Voltage - DC Reverse (Vr) (Max) | - |
| Current - Average Rectified (Io) | - |
| Voltage - Forward (Vf) (Max) @ If | - |
| Speed | - |
| Reverse Recovery Time (trr) | - |
| Current - Reverse Leakage @ Vr | - |
| Capacitance @ Vr, F | - |
| Mounting Type | - |
| Package / Case | - |
| Supplier Device Package | - |
| Operating Temperature - Junction | - |
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Manufacturer STMicroelectronics Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 200V Current - Average Rectified (Io) 4A Voltage - Forward (Vf) (Max) @ If 1.25V @ 12A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 35ns Current - Reverse Leakage @ Vr 10µA @ 200V Capacitance @ Vr, F - Mounting Type Surface Mount Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package DPAK Operating Temperature - Junction 150°C (Max) |
Manufacturer Vishay Semiconductor Diodes Division Series Automotive, AEC-Q101, Superectifier® Diode Type Standard Voltage - DC Reverse (Vr) (Max) 200V Current - Average Rectified (Io) 1A Voltage - Forward (Vf) (Max) @ If 1.3V @ 1A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 150ns Current - Reverse Leakage @ Vr 5µA @ 200V Capacitance @ Vr, F 6.6pF @ 4V, 1MHz Mounting Type Through Hole Package / Case MPG06, Axial Supplier Device Package MPG06 Operating Temperature - Junction -55°C ~ 150°C |
Manufacturer Rohm Semiconductor Series - Diode Type Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max) 650V Current - Average Rectified (Io) 8A (DC) Voltage - Forward (Vf) (Max) @ If 1.55V @ 8A Speed No Recovery Time > 500mA (Io) Reverse Recovery Time (trr) 0ns Current - Reverse Leakage @ Vr 160µA @ 600V Capacitance @ Vr, F 291pF @ 1V, 1MHz Mounting Type Surface Mount Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package TO-263AB Operating Temperature - Junction 175°C (Max) |
Manufacturer Vishay Semiconductor Diodes Division Series - Diode Type Avalanche Voltage - DC Reverse (Vr) (Max) 1000V Current - Average Rectified (Io) 1.25A Voltage - Forward (Vf) (Max) @ If 1.5V @ 1A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 100ns Current - Reverse Leakage @ Vr 5µA @ 1000V Capacitance @ Vr, F - Mounting Type Through Hole Package / Case SOD-57, Axial Supplier Device Package SOD-57 Operating Temperature - Junction -55°C ~ 175°C |
