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NSVBC123JPDXV6T1G

NSVBC123JPDXV6T1G

For Reference Only

Part Number NSVBC123JPDXV6T1G
PNEDA Part # NSVBC123JPDXV6T1G
Description TRANS PREBIAS NPN/PNP 50V SOT563
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 5,706
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 25 - Jun 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NSVBC123JPDXV6T1G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNSVBC123JPDXV6T1G
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - Arrays, Pre-Biased
Datasheet
NSVBC123JPDXV6T1G, NSVBC123JPDXV6T1G Datasheet (Total Pages: 10, Size: 135.01 KB)
PDFNSVB123JPDXV6T1G Datasheet Cover
NSVB123JPDXV6T1G Datasheet Page 2 NSVB123JPDXV6T1G Datasheet Page 3 NSVB123JPDXV6T1G Datasheet Page 4 NSVB123JPDXV6T1G Datasheet Page 5 NSVB123JPDXV6T1G Datasheet Page 6 NSVB123JPDXV6T1G Datasheet Page 7 NSVB123JPDXV6T1G Datasheet Page 8 NSVB123JPDXV6T1G Datasheet Page 9 NSVB123JPDXV6T1G Datasheet Page 10

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NSVBC123JPDXV6T1G Specifications

ManufacturerON Semiconductor
SeriesAutomotive, AEC-Q101
Transistor Type1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1)2.2kOhms
Resistor - Emitter Base (R2)47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic250mV @ 300µA, 10mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition-
Power - Max500mW
Mounting TypeSurface Mount
Package / CaseSOT-563, SOT-666
Supplier Device PackageSOT-563

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Current - Collector Cutoff (Max)

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Frequency - Transition

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Power - Max

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Transistor Type

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Current - Collector (Ic) (Max)

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Voltage - Collector Emitter Breakdown (Max)

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Resistor - Base (R1)

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Resistor - Emitter Base (R2)

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Vce Saturation (Max) @ Ib, Ic

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Current - Collector Cutoff (Max)

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Frequency - Transition

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Power - Max

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6-TSSOP, SC-88, SOT-363

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Supplier Device Package

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