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NSVBC144EPDXV6T1G

NSVBC144EPDXV6T1G

For Reference Only

Part Number NSVBC144EPDXV6T1G
PNEDA Part # NSVBC144EPDXV6T1G
Description TRANS PREBIAS NPN/PNP 50V SOT563
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 4,968
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NSVBC144EPDXV6T1G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNSVBC144EPDXV6T1G
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - Arrays, Pre-Biased
Datasheet
NSVBC144EPDXV6T1G, NSVBC144EPDXV6T1G Datasheet (Total Pages: 10, Size: 100.93 KB)
PDFNSVB144EPDXV6T1G Datasheet Cover
NSVB144EPDXV6T1G Datasheet Page 2 NSVB144EPDXV6T1G Datasheet Page 3 NSVB144EPDXV6T1G Datasheet Page 4 NSVB144EPDXV6T1G Datasheet Page 5 NSVB144EPDXV6T1G Datasheet Page 6 NSVB144EPDXV6T1G Datasheet Page 7 NSVB144EPDXV6T1G Datasheet Page 8 NSVB144EPDXV6T1G Datasheet Page 9 NSVB144EPDXV6T1G Datasheet Page 10

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NSVBC144EPDXV6T1G Specifications

ManufacturerON Semiconductor
SeriesAutomotive, AEC-Q101
Transistor Type1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1)47kOhms
Resistor - Emitter Base (R2)47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic250mV @ 300µA, 10mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition-
Power - Max500mW
Mounting TypeSurface Mount
Package / CaseSOT-563, SOT-666
Supplier Device PackageSOT-563

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