NSVF6003SB6T1G
For Reference Only
| Part Number | NSVF6003SB6T1G |
| PNEDA Part # | NSVF6003SB6T1G |
| Description | RF TRANS NPN 12V 7GHZ 6CPH |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 8,388 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 25 - Jun 30 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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NSVF6003SB6T1G Resources
| Brand | ON Semiconductor |
| ECAD Module |
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| Mfr. Part Number | NSVF6003SB6T1G |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - RF |
| Datasheet |
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NSVF6003SB6T1G Specifications
| Manufacturer | ON Semiconductor |
| Series | Automotive, AEC-Q101 |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 12V |
| Frequency - Transition | 7GHz |
| Noise Figure (dB Typ @ f) | 3dB @ 1GHz |
| Gain | 9dB |
| Power - Max | 800mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 50mA, 5V |
| Current - Collector (Ic) (Max) | 150mA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Supplier Device Package | 6-CPH |
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Manufacturer Central Semiconductor Corp Series - Transistor Type PNP Voltage - Collector Emitter Breakdown (Max) 25V Frequency - Transition 2.5GHz Noise Figure (dB Typ @ f) - Gain 25dB Power - Max 300mW DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 2mA, 10V Current - Collector (Ic) (Max) 30mA Operating Temperature -65°C ~ 200°C (TJ) Mounting Type Through Hole Package / Case TO-206AF, TO-72-4 Metal Can Supplier Device Package TO-72 |
