NSVMMBTH10LT1G
For Reference Only
| Part Number | NSVMMBTH10LT1G |
| PNEDA Part # | NSVMMBTH10LT1G |
| Description | RF TRANS NPN 25V 650MHZ SOT23 |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 24,720 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 7 - May 12 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
NSVMMBTH10LT1G Resources
| Brand | ON Semiconductor |
| ECAD Module |
|
| Mfr. Part Number | NSVMMBTH10LT1G |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - RF |
| Datasheet |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- NSVMMBTH10LT1G Datasheet
- where to find NSVMMBTH10LT1G
- ON Semiconductor
- ON Semiconductor NSVMMBTH10LT1G
- NSVMMBTH10LT1G PDF Datasheet
- NSVMMBTH10LT1G Stock
- NSVMMBTH10LT1G Pinout
- Datasheet NSVMMBTH10LT1G
- NSVMMBTH10LT1G Supplier
- ON Semiconductor Distributor
- NSVMMBTH10LT1G Price
- NSVMMBTH10LT1G Distributor
NSVMMBTH10LT1G Specifications
| Manufacturer | ON Semiconductor |
| Series | - |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 25V |
| Frequency - Transition | 650MHz |
| Noise Figure (dB Typ @ f) | - |
| Gain | - |
| Power - Max | 225mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 4mA, 10V |
| Current - Collector (Ic) (Max) | - |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | SOT-23 |
The Products You May Be Interested In
|
Manufacturer Microsemi Corporation Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 65V Frequency - Transition 1.09GHz Noise Figure (dB Typ @ f) - Gain 6dB Power - Max 2900W DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 1A, 5V Current - Collector (Ic) (Max) 80A Operating Temperature 200°C (TJ) Mounting Type Chassis Mount Package / Case 55KV Supplier Device Package 55KV |
Manufacturer Microsemi Corporation Series - Transistor Type - Voltage - Collector Emitter Breakdown (Max) - Frequency - Transition - Noise Figure (dB Typ @ f) - Gain - Power - Max - DC Current Gain (hFE) (Min) @ Ic, Vce - Current - Collector (Ic) (Max) - Operating Temperature - Mounting Type - Package / Case - Supplier Device Package - |
Manufacturer Toshiba Semiconductor and Storage Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 30V Frequency - Transition 550MHz Noise Figure (dB Typ @ f) 2dB ~ 5dB @ 100MHz Gain 17dB ~ 23dB Power - Max 100mW DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1mA, 6V Current - Collector (Ic) (Max) 20mA Operating Temperature 125°C (TJ) Mounting Type Surface Mount Package / Case SC-70, SOT-323 Supplier Device Package USM |
Manufacturer Microsemi Corporation Series - Transistor Type - Voltage - Collector Emitter Breakdown (Max) - Frequency - Transition - Noise Figure (dB Typ @ f) - Gain - Power - Max - DC Current Gain (hFE) (Min) @ Ic, Vce - Current - Collector (Ic) (Max) - Operating Temperature - Mounting Type - Package / Case - Supplier Device Package - |
Manufacturer CEL Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 10V Frequency - Transition 10GHz Noise Figure (dB Typ @ f) 1.7dB ~ 2.6dB @ 2GHz ~ 4GHz Gain 6.5dB ~ 11dB Power - Max 200mW DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 10mA, 6V Current - Collector (Ic) (Max) 35mA Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case SOT-143R Supplier Device Package SOT-143R |
