Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

NSVMMUN2113LT3G

NSVMMUN2113LT3G

For Reference Only

Part Number NSVMMUN2113LT3G
PNEDA Part # NSVMMUN2113LT3G
Description TRANS PREBIAS PNP SOT23-3
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 2,556
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 6 - May 11 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NSVMMUN2113LT3G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNSVMMUN2113LT3G
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - Single, Pre-Biased
Datasheet
NSVMMUN2113LT3G, NSVMMUN2113LT3G Datasheet (Total Pages: 12, Size: 196.7 KB)
PDFNSBA144EF3T5G Datasheet Cover
NSBA144EF3T5G Datasheet Page 2 NSBA144EF3T5G Datasheet Page 3 NSBA144EF3T5G Datasheet Page 4 NSBA144EF3T5G Datasheet Page 5 NSBA144EF3T5G Datasheet Page 6 NSBA144EF3T5G Datasheet Page 7 NSBA144EF3T5G Datasheet Page 8 NSBA144EF3T5G Datasheet Page 9 NSBA144EF3T5G Datasheet Page 10 NSBA144EF3T5G Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • NSVMMUN2113LT3G Datasheet
  • where to find NSVMMUN2113LT3G
  • ON Semiconductor

  • ON Semiconductor NSVMMUN2113LT3G
  • NSVMMUN2113LT3G PDF Datasheet
  • NSVMMUN2113LT3G Stock

  • NSVMMUN2113LT3G Pinout
  • Datasheet NSVMMUN2113LT3G
  • NSVMMUN2113LT3G Supplier

  • ON Semiconductor Distributor
  • NSVMMUN2113LT3G Price
  • NSVMMUN2113LT3G Distributor

NSVMMUN2113LT3G Specifications

ManufacturerON Semiconductor
Series-
Transistor TypePNP - Pre-Biased
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1)47 kOhms
Resistor - Emitter Base (R2)47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic250mV @ 300µA, 10mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition-
Power - Max246mW
Mounting TypeSurface Mount
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageSOT-23-3 (TO-236)

The Products You May Be Interested In

RN1418,LF

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

*

Transistor Type

-

Current - Collector (Ic) (Max)

-

Voltage - Collector Emitter Breakdown (Max)

-

Resistor - Base (R1)

-

Resistor - Emitter Base (R2)

-

DC Current Gain (hFE) (Min) @ Ic, Vce

-

Vce Saturation (Max) @ Ib, Ic

-

Current - Collector Cutoff (Max)

-

Frequency - Transition

-

Power - Max

-

Mounting Type

-

Package / Case

-

Supplier Device Package

-

BCR553E6327HTSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

Transistor Type

PNP - Pre-Biased

Current - Collector (Ic) (Max)

500mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

2.2 kOhms

Resistor - Emitter Base (R2)

2.2 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

40 @ 50mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 2.5mA, 50mA

Current - Collector Cutoff (Max)

100nA (ICBO)

Frequency - Transition

150MHz

Power - Max

330mW

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Supplier Device Package

SOT-23-3

RN2105,LF(CT

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

*

Transistor Type

-

Current - Collector (Ic) (Max)

-

Voltage - Collector Emitter Breakdown (Max)

-

Resistor - Base (R1)

-

Resistor - Emitter Base (R2)

-

DC Current Gain (hFE) (Min) @ Ic, Vce

-

Vce Saturation (Max) @ Ib, Ic

-

Current - Collector Cutoff (Max)

-

Frequency - Transition

-

Power - Max

-

Mounting Type

-

Package / Case

-

Supplier Device Package

-

BCR521E6327HTSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

Transistor Type

NPN - Pre-Biased

Current - Collector (Ic) (Max)

500mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

1 kOhms

Resistor - Emitter Base (R2)

1 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

20 @ 50mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 2.5mA, 50mA

Current - Collector Cutoff (Max)

100nA (ICBO)

Frequency - Transition

100MHz

Power - Max

330mW

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Supplier Device Package

SOT-23-3

UNR221000L

Panasonic Electronic Components

Manufacturer

Panasonic Electronic Components

Series

-

Transistor Type

NPN - Pre-Biased

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

47 kOhms

Resistor - Emitter Base (R2)

-

DC Current Gain (hFE) (Min) @ Ic, Vce

160 @ 5mA, 10V

Vce Saturation (Max) @ Ib, Ic

250mV @ 300µA, 10mA

Current - Collector Cutoff (Max)

500nA

Frequency - Transition

150MHz

Power - Max

200mW

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Supplier Device Package

Mini3-G1

Recently Sold

IHLP2525CZERR10M01

IHLP2525CZERR10M01

Vishay Dale

FIXED IND 100NH 32.5A 1.7 MOHM

LPC1768FBD100,551

LPC1768FBD100,551

NXP

IC MCU 32BIT 512KB FLASH 100LQFP

MC33883HEGR2

MC33883HEGR2

NXP

IC H-BRIDGE PRE-DRIVER 20SOIC

SI4214DDY-T1-GE3

SI4214DDY-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 8.5A 8-SOIC

AD9515BCPZ

AD9515BCPZ

Analog Devices

IC CLK BUFFER 1:2 1.6GHZ 32LFCSP

BLM18PG471SN1D

BLM18PG471SN1D

Murata

FERRITE BEAD 470 OHM 0603 1LN

B360B-13-F

B360B-13-F

Diodes Incorporated

DIODE SCHOTTKY 60V 3A SMB

TLJT107M010R0900

TLJT107M010R0900

CAP TANT 100UF 20% 10V 1411

MAX3378EEUD+

MAX3378EEUD+

Maxim Integrated

IC TRNSLTR BIDIRECTIONAL 14TSSOP

16SVPF180M

16SVPF180M

Panasonic Electronic Components

CAP ALUM POLY 180UF 20% 16V SMD

HSMS-2862-TR1G

HSMS-2862-TR1G

Broadcom

RF DIODE SCHOTTKY 4V SOT23-3

CK45-R3DD102KAVRA

CK45-R3DD102KAVRA

TDK

CAP CER 1000PF 2KV RADIAL