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NSVMMUN2135LT1G

NSVMMUN2135LT1G

For Reference Only

Part Number NSVMMUN2135LT1G
PNEDA Part # NSVMMUN2135LT1G
Description TRANS PNP BIPO 50V SOT23-3
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 7,704
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 13 - Jun 18 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NSVMMUN2135LT1G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNSVMMUN2135LT1G
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - Single, Pre-Biased
Datasheet
NSVMMUN2135LT1G, NSVMMUN2135LT1G Datasheet (Total Pages: 12, Size: 103.76 KB)
PDFDTA123JM3T5G Datasheet Cover
DTA123JM3T5G Datasheet Page 2 DTA123JM3T5G Datasheet Page 3 DTA123JM3T5G Datasheet Page 4 DTA123JM3T5G Datasheet Page 5 DTA123JM3T5G Datasheet Page 6 DTA123JM3T5G Datasheet Page 7 DTA123JM3T5G Datasheet Page 8 DTA123JM3T5G Datasheet Page 9 DTA123JM3T5G Datasheet Page 10 DTA123JM3T5G Datasheet Page 11

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NSVMMUN2135LT1G Specifications

ManufacturerON Semiconductor
SeriesAutomotive, AEC-Q101
Transistor TypePNP - Pre-Biased
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1)2.2 kOhms
Resistor - Emitter Base (R2)47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic250mV @ 300µA, 10mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition-
Power - Max246mW
Mounting TypeSurface Mount
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageSOT-23-3 (TO-236)

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