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NSVMUN531335DW1T1G

NSVMUN531335DW1T1G

For Reference Only

Part Number NSVMUN531335DW1T1G
PNEDA Part # NSVMUN531335DW1T1G
Description TRANS PREBIAS NPN/PNP 50V 6TSSOP
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 26,130
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 17 - Jun 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NSVMUN531335DW1T1G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNSVMUN531335DW1T1G
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - Arrays, Pre-Biased
Datasheet
NSVMUN531335DW1T1G, NSVMUN531335DW1T1G Datasheet (Total Pages: 7, Size: 75.19 KB)
PDFNSVMUN531335DW1T3G Datasheet Cover
NSVMUN531335DW1T3G Datasheet Page 2 NSVMUN531335DW1T3G Datasheet Page 3 NSVMUN531335DW1T3G Datasheet Page 4 NSVMUN531335DW1T3G Datasheet Page 5 NSVMUN531335DW1T3G Datasheet Page 6 NSVMUN531335DW1T3G Datasheet Page 7

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NSVMUN531335DW1T1G Specifications

ManufacturerON Semiconductor
SeriesAutomotive, AEC-Q101
Transistor Type1 NPN Pre-Biased, 1 PNP
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1)47kOhms, 2.2kOhms
Resistor - Emitter Base (R2)47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic250mV @ 300µA, 10mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition-
Power - Max187mW
Mounting TypeSurface Mount
Package / Case6-TSSOP, SC-88, SOT-363
Supplier Device PackageSC-88/SC70-6/SOT-363

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