Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

NTD110N02R

NTD110N02R

For Reference Only

Part Number NTD110N02R
PNEDA Part # NTD110N02R
Description MOSFET N-CH 24V 12.5A DPAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 3,384
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 13 - Jun 18 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NTD110N02R Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNTD110N02R
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NTD110N02R, NTD110N02R Datasheet (Total Pages: 6, Size: 125.34 KB)
PDFSTD110N02RT4G Datasheet Cover
STD110N02RT4G Datasheet Page 2 STD110N02RT4G Datasheet Page 3 STD110N02RT4G Datasheet Page 4 STD110N02RT4G Datasheet Page 5 STD110N02RT4G Datasheet Page 6

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • NTD110N02R Datasheet
  • where to find NTD110N02R
  • ON Semiconductor

  • ON Semiconductor NTD110N02R
  • NTD110N02R PDF Datasheet
  • NTD110N02R Stock

  • NTD110N02R Pinout
  • Datasheet NTD110N02R
  • NTD110N02R Supplier

  • ON Semiconductor Distributor
  • NTD110N02R Price
  • NTD110N02R Distributor

NTD110N02R Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)24V
Current - Continuous Drain (Id) @ 25°C12.5A (Ta), 110A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs4.6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs28nC @ 4.5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3440pF @ 20V
FET Feature-
Power Dissipation (Max)1.5W (Ta), 110W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDPAK
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

The Products You May Be Interested In

Manufacturer

IXYS

Series

TrenchMV™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

220A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

4mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

158nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

7200pF @ 25V

FET Feature

-

Power Dissipation (Max)

430W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247 (IXTH)

Package / Case

TO-247-3

SIJ484DP-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

35A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

6.3mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

45nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1600pF @ 15V

FET Feature

-

Power Dissipation (Max)

5W (Ta), 27.7W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® SO-8

Package / Case

PowerPAK® SO-8

STL4N80K5

STMicroelectronics

Manufacturer

STMicroelectronics

Series

SuperMESH5™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

800V

Current - Continuous Drain (Id) @ 25°C

2.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

2.5Ohm @ 1.5A, 10V

Vgs(th) (Max) @ Id

5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

10.5nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

175pF @ 100V

FET Feature

-

Power Dissipation (Max)

38W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerFlat™ (5x6)

Package / Case

8-PowerVDFN

APT20M38SVFRG

Microsemi

Manufacturer

Microsemi Corporation

Series

POWER MOS V®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

67A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

38mOhm @ 500mA, 10V

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

225nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

6120pF @ 25V

FET Feature

-

Power Dissipation (Max)

370W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D3 [S]

Package / Case

TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

STU8NM60ND

STMicroelectronics

Manufacturer

STMicroelectronics

Series

FDmesh™ II

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

7A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

700mOhm @ 3.5A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

22nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

560pF @ 50V

FET Feature

-

Power Dissipation (Max)

70W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

I-PAK

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA

Recently Sold

SMCJ36CA

SMCJ36CA

Bourns

TVS DIODE 36V 58.1V SMC

ISL80103IRAJZ

ISL80103IRAJZ

Renesas Electronics America Inc.

IC REG LINEAR POS ADJ 3A 10DFN

ADP3339AKCZ-2.5-R7

ADP3339AKCZ-2.5-R7

Analog Devices

IC REG LINEAR 2.5V 1.5A SOT223-3

NC7WZ132K8X

NC7WZ132K8X

ON Semiconductor

IC GATE NAND SCHMITT 2CH US8

LT1965EDD#PBF

LT1965EDD#PBF

Linear Technology/Analog Devices

IC REG LINEAR POS ADJ 1.1A 8DFN

AO3407A

AO3407A

Alpha & Omega Semiconductor

MOSFET P-CH 30V 4.3A SOT23

NB2305AI1HDR2G

NB2305AI1HDR2G

ON Semiconductor

IC BUFFER CLOCK 5OUT 3.3V 8-SOIC

MMSZ7V5T1G

MMSZ7V5T1G

ON Semiconductor

DIODE ZENER 7.5V 500MW SOD123

ES1JAF

ES1JAF

ON Semiconductor

DIODE GEN PURP 600V 1A DO214AD

IPS5451S

IPS5451S

Infineon Technologies

IC MOSFET HS PWR SW 35A D2PAK

MAX3491EESD+T

MAX3491EESD+T

Maxim Integrated

IC TRANSCEIVER FULL 1/1 14SOIC

SP3012-06UTG

SP3012-06UTG

Littelfuse

TVS DIODE 5V 7V 14UDFN