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NTD23N03R-1G

NTD23N03R-1G

For Reference Only

Part Number NTD23N03R-1G
PNEDA Part # NTD23N03R-1G
Description MOSFET N-CH 25V 3.8A IPAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 2,484
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 17 - May 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NTD23N03R-1G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNTD23N03R-1G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NTD23N03R-1G, NTD23N03R-1G Datasheet (Total Pages: 7, Size: 127.61 KB)
PDFNTD23N03RT4G Datasheet Cover
NTD23N03RT4G Datasheet Page 2 NTD23N03RT4G Datasheet Page 3 NTD23N03RT4G Datasheet Page 4 NTD23N03RT4G Datasheet Page 5 NTD23N03RT4G Datasheet Page 6 NTD23N03RT4G Datasheet Page 7

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NTD23N03R-1G Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25°C3.8A (Ta), 17.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4V, 5V
Rds On (Max) @ Id, Vgs45mOhm @ 6A, 10V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs3.76nC @ 4.5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds225pF @ 20V
FET Feature-
Power Dissipation (Max)1.14W (Ta), 22.3W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI-PAK
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

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