Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

NTD3055L104G

NTD3055L104G

For Reference Only

Part Number NTD3055L104G
PNEDA Part # NTD3055L104G
Description MOSFET N-CH 60V 12A DPAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 3,456
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 24 - Jun 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NTD3055L104G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNTD3055L104G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NTD3055L104G, NTD3055L104G Datasheet (Total Pages: 10, Size: 147.02 KB)
PDFNTDV3055L104-1G Datasheet Cover
NTDV3055L104-1G Datasheet Page 2 NTDV3055L104-1G Datasheet Page 3 NTDV3055L104-1G Datasheet Page 4 NTDV3055L104-1G Datasheet Page 5 NTDV3055L104-1G Datasheet Page 6 NTDV3055L104-1G Datasheet Page 7 NTDV3055L104-1G Datasheet Page 8 NTDV3055L104-1G Datasheet Page 9 NTDV3055L104-1G Datasheet Page 10

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • NTD3055L104G Datasheet
  • where to find NTD3055L104G
  • ON Semiconductor

  • ON Semiconductor NTD3055L104G
  • NTD3055L104G PDF Datasheet
  • NTD3055L104G Stock

  • NTD3055L104G Pinout
  • Datasheet NTD3055L104G
  • NTD3055L104G Supplier

  • ON Semiconductor Distributor
  • NTD3055L104G Price
  • NTD3055L104G Distributor

NTD3055L104G Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C12A (Ta)
Drive Voltage (Max Rds On, Min Rds On)5V
Rds On (Max) @ Id, Vgs104mOhm @ 6A, 5V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs20nC @ 5V
Vgs (Max)±15V
Input Capacitance (Ciss) (Max) @ Vds440pF @ 25V
FET Feature-
Power Dissipation (Max)1.5W (Ta), 48W (Tj)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDPAK
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

The Products You May Be Interested In

APT48M80B2

Microsemi

Manufacturer

Microsemi Corporation

Series

POWER MOS 8™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

800V

Current - Continuous Drain (Id) @ 25°C

49A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

190mOhm @ 24A, 10V

Vgs(th) (Max) @ Id

5V @ 2.5mA

Gate Charge (Qg) (Max) @ Vgs

305nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

9330pF @ 25V

FET Feature

-

Power Dissipation (Max)

1135W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

T-MAX™ [B2]

Package / Case

TO-247-3 Variant

IXFV16N80P

IXYS

Manufacturer

IXYS

Series

HiPerFET™, PolarHT™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

800V

Current - Continuous Drain (Id) @ 25°C

16A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

600mOhm @ 500mA, 10V

Vgs(th) (Max) @ Id

5V @ 4mA

Gate Charge (Qg) (Max) @ Vgs

71nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

4600pF @ 25V

FET Feature

-

Power Dissipation (Max)

460W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PLUS220

Package / Case

TO-220-3, Short Tab

SI4842BDY-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

28A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

4.2mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

100nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3650pF @ 15V

FET Feature

-

Power Dissipation (Max)

3W (Ta), 6.25W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SO

Package / Case

8-SOIC (0.154", 3.90mm Width)

DMNH6021SPS-13

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

Automotive, AEC-Q101

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

55A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

23mOhm @ 12A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

19.7nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1016pF @ 30V

FET Feature

-

Power Dissipation (Max)

1.6W (Ta), 53W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerDI5060-8

Package / Case

8-PowerTDFN

IPA50R800CE

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

13V

Rds On (Max) @ Id, Vgs

800mOhm @ 1.5A, 13V

Vgs(th) (Max) @ Id

3.5V @ 130µA

Gate Charge (Qg) (Max) @ Vgs

12.4nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

280pF @ 100V

FET Feature

Super Junction

Power Dissipation (Max)

26.4W (Tc)

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO220-FP

Package / Case

TO-220-3 Full Pack

Recently Sold

16SVPF180M

16SVPF180M

Panasonic Electronic Components

CAP ALUM POLY 180UF 20% 16V SMD

NFE61PT472C1H9L

NFE61PT472C1H9L

Murata

FILTER LC(T) 4700PF SMD

LTC6652AHMS8-2.5#PBF

LTC6652AHMS8-2.5#PBF

Linear Technology/Analog Devices

IC VREF SERIES 2.5V 8MSOP

B350B-13-F

B350B-13-F

Diodes Incorporated

DIODE SCHOTTKY 50V 3A SMB

ESD5B5.0ST1G

ESD5B5.0ST1G

ON Semiconductor

TVS DIODE 5V SOD523

SZNUP2105LT1G

SZNUP2105LT1G

ON Semiconductor

TVS DIODE 24V 44V SOT23-3

ATMEGA16-16AC

ATMEGA16-16AC

Microchip Technology

IC MCU 8BIT 16KB FLASH 44TQFP

DSC1001DL5-024.0000

DSC1001DL5-024.0000

Microchip Technology

MEMS OSC XO 24.0000MHZ CMOS SMD

FAN1112SX

FAN1112SX

ON Semiconductor

IC REG LINEAR 1.2V 1A SOT223-4

MC14066BDR2G

MC14066BDR2G

ON Semiconductor

IC MULTIPLEXER QUAD 4X1 14SOIC

74F175SCX

74F175SCX

ON Semiconductor

IC FF D-TYPE SNGL 4BIT 16SOIC

MBRD1035CTLG

MBRD1035CTLG

ON Semiconductor

DIODE ARRAY SCHOTTKY 35V 5A DPAK