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NTD3055L170-1G

NTD3055L170-1G

For Reference Only

Part Number NTD3055L170-1G
PNEDA Part # NTD3055L170-1G
Description MOSFET N-CH 60V 9A IPAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 2,394
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 29 - May 4 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NTD3055L170-1G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNTD3055L170-1G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NTD3055L170-1G, NTD3055L170-1G Datasheet (Total Pages: 10, Size: 146.7 KB)
PDFNTD3055L170G Datasheet Cover
NTD3055L170G Datasheet Page 2 NTD3055L170G Datasheet Page 3 NTD3055L170G Datasheet Page 4 NTD3055L170G Datasheet Page 5 NTD3055L170G Datasheet Page 6 NTD3055L170G Datasheet Page 7 NTD3055L170G Datasheet Page 8 NTD3055L170G Datasheet Page 9 NTD3055L170G Datasheet Page 10

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NTD3055L170-1G Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)5V
Rds On (Max) @ Id, Vgs170mOhm @ 4.5A, 5V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs10nC @ 5V
Vgs (Max)±15V
Input Capacitance (Ciss) (Max) @ Vds275pF @ 25V
FET Feature-
Power Dissipation (Max)1.5W (Ta), 28.5W (Tj)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI-PAK
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

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