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NTD3808N-1G

NTD3808N-1G

For Reference Only

Part Number NTD3808N-1G
PNEDA Part # NTD3808N-1G
Description MOSFET N-CH 16V 12A IPAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 4,374
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 27 - Jul 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NTD3808N-1G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNTD3808N-1G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NTD3808N-1G, NTD3808N-1G Datasheet (Total Pages: 7, Size: 93.85 KB)
PDFNTD3808NT4G Datasheet Cover
NTD3808NT4G Datasheet Page 2 NTD3808NT4G Datasheet Page 3 NTD3808NT4G Datasheet Page 4 NTD3808NT4G Datasheet Page 5 NTD3808NT4G Datasheet Page 6 NTD3808NT4G Datasheet Page 7

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NTD3808N-1G Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)16V
Current - Continuous Drain (Id) @ 25°C12A (Ta), 76A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs5.8mOhm @ 15A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs21nC @ 4.5V
Vgs (Max)±16V
Input Capacitance (Ciss) (Max) @ Vds1660pF @ 12V
FET Feature-
Power Dissipation (Max)1.3W (Ta), 52W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI-PAK
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

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