NTD3808N-1G
For Reference Only
| Part Number | NTD3808N-1G |
| PNEDA Part # | NTD3808N-1G |
| Description | MOSFET N-CH 16V 12A IPAK |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 4,374 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 10 - May 15 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
NTD3808N-1G Resources
| Brand | ON Semiconductor |
| ECAD Module |
|
| Mfr. Part Number | NTD3808N-1G |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- NTD3808N-1G Datasheet
- where to find NTD3808N-1G
- ON Semiconductor
- ON Semiconductor NTD3808N-1G
- NTD3808N-1G PDF Datasheet
- NTD3808N-1G Stock
- NTD3808N-1G Pinout
- Datasheet NTD3808N-1G
- NTD3808N-1G Supplier
- ON Semiconductor Distributor
- NTD3808N-1G Price
- NTD3808N-1G Distributor
NTD3808N-1G Specifications
| Manufacturer | ON Semiconductor |
| Series | - |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 16V |
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta), 76A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 5.8mOhm @ 15A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 21nC @ 4.5V |
| Vgs (Max) | ±16V |
| Input Capacitance (Ciss) (Max) @ Vds | 1660pF @ 12V |
| FET Feature | - |
| Power Dissipation (Max) | 1.3W (Ta), 52W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | I-PAK |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
The Products You May Be Interested In
|
Manufacturer Infineon Technologies Series CoolMOS™ C7 FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 75A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 19mOhm @ 58.3A, 10V Vgs(th) (Max) @ Id 4V @ 2.92mA Gate Charge (Qg) (Max) @ Vgs 215nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 9900pF @ 400V FET Feature - Power Dissipation (Max) 446W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO247-3 Package / Case TO-247-3 |
Manufacturer Toshiba Semiconductor and Storage Series U-MOSVI-H FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 80V Current - Continuous Drain (Id) @ 25°C 28A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 9.4mOhm @ 14A, 10V Vgs(th) (Max) @ Id 2.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs 91nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 7540pF @ 10V FET Feature - Power Dissipation (Max) 1.6W (Ta), 45W (Tc) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SOP Advance (5x5) Package / Case 8-PowerVDFN |
Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 195A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 2mOhm @ 75A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 240nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 6450pF @ 25V FET Feature - Power Dissipation (Max) 300W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-262 Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA |
Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 4.2A (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.7V, 4.5V Rds On (Max) @ Id, Vgs 85mOhm @ 4A, 4.5V Vgs(th) (Max) @ Id 700mV @ 250µA Gate Charge (Qg) (Max) @ Vgs 7.5nC @ 4.5V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 310pF @ 15V FET Feature - Power Dissipation (Max) 2.5W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SO Package / Case 8-SOIC (0.154", 3.90mm Width) |
Manufacturer Central Semiconductor Corp Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 650mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V Rds On (Max) @ Id, Vgs 230mOhm @ 600mA, 4.5V Vgs(th) (Max) @ Id 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 1.58nC @ 4.5V Vgs (Max) 8V Input Capacitance (Ciss) (Max) @ Vds 100pF @ 16V FET Feature - Power Dissipation (Max) 300mW (Ta) Operating Temperature -65°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-523 Package / Case SOT-523 |
