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NTD4809N-1G

NTD4809N-1G

For Reference Only

Part Number NTD4809N-1G
PNEDA Part # NTD4809N-1G
Description MOSFET N-CH 30V 9A IPAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 3,924
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 25 - Jun 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NTD4809N-1G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNTD4809N-1G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NTD4809N-1G, NTD4809N-1G Datasheet (Total Pages: 9, Size: 117.03 KB)
PDFNVD4809NT4G Datasheet Cover
NVD4809NT4G Datasheet Page 2 NVD4809NT4G Datasheet Page 3 NVD4809NT4G Datasheet Page 4 NVD4809NT4G Datasheet Page 5 NVD4809NT4G Datasheet Page 6 NVD4809NT4G Datasheet Page 7 NVD4809NT4G Datasheet Page 8 NVD4809NT4G Datasheet Page 9

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NTD4809N-1G Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C9.6A (Ta), 58A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 11.5V
Rds On (Max) @ Id, Vgs9mOhm @ 30A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs13nC @ 4.5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1456pF @ 12V
FET Feature-
Power Dissipation (Max)1.4W (Ta), 52W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI-PAK
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

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