Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

NTD4810N-1G

NTD4810N-1G

For Reference Only

Part Number NTD4810N-1G
PNEDA Part # NTD4810N-1G
Description MOSFET N-CH 30V 8.6A IPAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 8,874
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 2 - May 7 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NTD4810N-1G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNTD4810N-1G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NTD4810N-1G, NTD4810N-1G Datasheet (Total Pages: 7, Size: 81.06 KB)
PDFNVD4810NT4G-TB01 Datasheet Cover
NVD4810NT4G-TB01 Datasheet Page 2 NVD4810NT4G-TB01 Datasheet Page 3 NVD4810NT4G-TB01 Datasheet Page 4 NVD4810NT4G-TB01 Datasheet Page 5 NVD4810NT4G-TB01 Datasheet Page 6 NVD4810NT4G-TB01 Datasheet Page 7

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • NTD4810N-1G Datasheet
  • where to find NTD4810N-1G
  • ON Semiconductor

  • ON Semiconductor NTD4810N-1G
  • NTD4810N-1G PDF Datasheet
  • NTD4810N-1G Stock

  • NTD4810N-1G Pinout
  • Datasheet NTD4810N-1G
  • NTD4810N-1G Supplier

  • ON Semiconductor Distributor
  • NTD4810N-1G Price
  • NTD4810N-1G Distributor

NTD4810N-1G Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C9A (Ta), 54A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 11.5V
Rds On (Max) @ Id, Vgs10mOhm @ 30A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs11nC @ 4.5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1350pF @ 12V
FET Feature-
Power Dissipation (Max)1.4W (Ta), 50W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI-PAK
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

The Products You May Be Interested In

IPD60R210CFD7ATMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

-

Supplier Device Package

-

Package / Case

-

IRF7494TR

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

150V

Current - Continuous Drain (Id) @ 25°C

5.2A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

44mOhm @ 3.1A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

54nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1750pF @ 25V

FET Feature

-

Power Dissipation (Max)

3W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SO

Package / Case

8-SOIC (0.154", 3.90mm Width)

DMT6010LFG-13

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

13A (Ta), 30A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

7.5mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

41.3nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2090pF @ 30V

FET Feature

-

Power Dissipation (Max)

2.2W (Ta), 41W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerDI3333-8

Package / Case

8-PowerVDFN

STW34NB20

STMicroelectronics

Manufacturer

STMicroelectronics

Series

PowerMESH™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

34A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

75mOhm @ 17A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

80nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

3300pF @ 25V

FET Feature

-

Power Dissipation (Max)

180W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247-3

Package / Case

TO-247-3

IRFP4137PBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

300V

Current - Continuous Drain (Id) @ 25°C

38A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

69mOhm @ 24A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

125nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

5168pF @ 50V

FET Feature

-

Power Dissipation (Max)

341W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247AC

Package / Case

TO-247-3

Recently Sold

AD7994BRU-0REEL

AD7994BRU-0REEL

Analog Devices

IC ADC 12BIT SAR 16TSSOP

LM2903D

LM2903D

STMicroelectronics

IC COMPARATOR DUAL LP 8-SOIC

TPSD227K006R0100

TPSD227K006R0100

CAP TANT 220UF 10% 6.3V 2917

STPS0560Z

STPS0560Z

STMicroelectronics

DIODE SCHOTTKY 60V 500MA SOD123

HCPL-5631

HCPL-5631

Broadcom

OPTOISO 1.5KV 2CH OPEN COLL 8DIP

M24256-BRMN6TP

M24256-BRMN6TP

STMicroelectronics

IC EEPROM 256K I2C 1MHZ 8SO

NPI-19A-201AH

NPI-19A-201AH

Amphenol Advanced Sensors

SENSOR PRES 29PSI ABS

RL2010FK-070R43L

RL2010FK-070R43L

Yageo

RES 0.43 OHM 1% 3/4W 2010

J201

J201

ON Semiconductor

JFET N-CH 40V 0.625W TO92

WSL1206R0500FEA

WSL1206R0500FEA

Vishay Dale

RES 0.05 OHM 1% 1/4W 1206

SIT9102AI-243N25E200.00000X

SIT9102AI-243N25E200.00000X

SiTIME

MEMS OSC XO 200.0000MHZ LVDS SMD

ADP1755ACPZ-R7

ADP1755ACPZ-R7

Analog Devices

IC REG LIN POS ADJ 1.2A 16LFCSP