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NTD4857N-1G

NTD4857N-1G

For Reference Only

Part Number NTD4857N-1G
PNEDA Part # NTD4857N-1G
Description MOSFET N-CH 25V 12A IPAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 8,766
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 27 - Jul 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NTD4857N-1G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNTD4857N-1G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NTD4857N-1G, NTD4857N-1G Datasheet (Total Pages: 8, Size: 271.42 KB)
PDFNTD4857NT4G Datasheet Cover
NTD4857NT4G Datasheet Page 2 NTD4857NT4G Datasheet Page 3 NTD4857NT4G Datasheet Page 4 NTD4857NT4G Datasheet Page 5 NTD4857NT4G Datasheet Page 6 NTD4857NT4G Datasheet Page 7 NTD4857NT4G Datasheet Page 8

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NTD4857N-1G Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25°C12A (Ta), 78A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs5.7mOhm @ 30A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs24nC @ 4.5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1960pF @ 12V
FET Feature-
Power Dissipation (Max)1.31W (Ta), 56.6W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI-PAK
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

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