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NTD4979N-35G

NTD4979N-35G

For Reference Only

Part Number NTD4979N-35G
PNEDA Part # NTD4979N-35G
Description MOSFET N-CH 30V 9.4A IPAK TRIMME
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 5,058
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NTD4979N-35G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNTD4979N-35G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NTD4979N-35G, NTD4979N-35G Datasheet (Total Pages: 7, Size: 117.98 KB)
PDFNTD4979NT4G Datasheet Cover
NTD4979NT4G Datasheet Page 2 NTD4979NT4G Datasheet Page 3 NTD4979NT4G Datasheet Page 4 NTD4979NT4G Datasheet Page 5 NTD4979NT4G Datasheet Page 6 NTD4979NT4G Datasheet Page 7

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NTD4979N-35G Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C9.4A (Ta), 41A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs9mOhm @ 30A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs16.5nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds837pF @ 15V
FET Feature-
Power Dissipation (Max)1.38W (Ta), 26.3W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI-PAK
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

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