Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

NTD50N03R

NTD50N03R

For Reference Only

Part Number NTD50N03R
PNEDA Part # NTD50N03R
Description MOSFET N-CH 25V 7.8A DPAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 2,394
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 3 - May 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NTD50N03R Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNTD50N03R
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NTD50N03R, NTD50N03R Datasheet (Total Pages: 8, Size: 79.25 KB)
PDFNTD50N03RT4G Datasheet Cover
NTD50N03RT4G Datasheet Page 2 NTD50N03RT4G Datasheet Page 3 NTD50N03RT4G Datasheet Page 4 NTD50N03RT4G Datasheet Page 5 NTD50N03RT4G Datasheet Page 6 NTD50N03RT4G Datasheet Page 7 NTD50N03RT4G Datasheet Page 8

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • NTD50N03R Datasheet
  • where to find NTD50N03R
  • ON Semiconductor

  • ON Semiconductor NTD50N03R
  • NTD50N03R PDF Datasheet
  • NTD50N03R Stock

  • NTD50N03R Pinout
  • Datasheet NTD50N03R
  • NTD50N03R Supplier

  • ON Semiconductor Distributor
  • NTD50N03R Price
  • NTD50N03R Distributor

NTD50N03R Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25°C7.8A (Ta), 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 11.5V
Rds On (Max) @ Id, Vgs12mOhm @ 30A, 11.5V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs15nC @ 11.5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds750pF @ 12V
FET Feature-
Power Dissipation (Max)1.5W (Ta), 50W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDPAK
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

The Products You May Be Interested In

DMS3012SFG-7

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

12A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

10mOhm @ 13.5A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

14.7nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4310pF @ 15V

FET Feature

Schottky Diode (Body)

Power Dissipation (Max)

890mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerDI3333-8

Package / Case

8-PowerVDFN

FDS4675

ON Semiconductor

Manufacturer

ON Semiconductor

Series

PowerTrench®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

11A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

13mOhm @ 11A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

56nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4350pF @ 20V

FET Feature

-

Power Dissipation (Max)

2.4W (Ta)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SOIC

Package / Case

8-SOIC (0.154", 3.90mm Width)

IRFS7437-7PPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®, StrongIRFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

195A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

1.4mOhm @ 100A, 10V

Vgs(th) (Max) @ Id

3.9V @ 150µA

Gate Charge (Qg) (Max) @ Vgs

225nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

7437pF @ 25V

FET Feature

-

Power Dissipation (Max)

231W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK (7-Lead)

Package / Case

TO-263-8, D²Pak (7 Leads + Tab), TO-263CA

IRFL4105TR

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

3.7A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

45mOhm @ 3.7A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

35nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

660pF @ 25V

FET Feature

-

Power Dissipation (Max)

1W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-223

Package / Case

TO-261-4, TO-261AA

IRFS4510TRLPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

61A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

13.9mOhm @ 37A, 10V

Vgs(th) (Max) @ Id

4V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

87nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3180pF @ 50V

FET Feature

-

Power Dissipation (Max)

140W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Recently Sold

SSCMRRN100MGAF5

SSCMRRN100MGAF5

Honeywell Sensing and Productivity Solutions

SENSOR PRES .1BAR GAUG 5V SMD

NCP81071BDR2G

NCP81071BDR2G

ON Semiconductor

IC MOSFET DVR HS 5A DUAL 8SOIC

IHLP2525CZERR47M01

IHLP2525CZERR47M01

Vishay Dale

FIXED IND 470NH 17.5A 4.2 MOHM

TLP350H(F)

TLP350H(F)

Toshiba Semiconductor and Storage

X36 PB-F PHOTOCOUPLER THRU HOLE

M27C256B-12F1

M27C256B-12F1

STMicroelectronics

IC EPROM 256K PARALLEL 28CDIP

LL4148

LL4148

ON Semiconductor

DIODE GEN PURP 100V 200MA SOD80

AUIRF1010ZS

AUIRF1010ZS

Infineon Technologies

MOSFET N-CH 55V 75A D2PAK

SQJ423EP-T1_GE3

SQJ423EP-T1_GE3

Vishay Siliconix

MOSFET P-CH 40V 55A POWERPAKSO-8

FSA5157L6X

FSA5157L6X

ON Semiconductor

IC SWITCH SPDT 6MICROPAK

NC7WZ00K8X

NC7WZ00K8X

ON Semiconductor

IC GATE NAND 2CH 2-INP US8

CG0603MLC-05LE

CG0603MLC-05LE

Bourns

VARISTOR 0603

FSAM30SH60A

FSAM30SH60A

ON Semiconductor

SMART POWER MODULE 30A SPM32-AA