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NTD5862N-1G

NTD5862N-1G

For Reference Only

Part Number NTD5862N-1G
PNEDA Part # NTD5862N-1G
Description MOSFET N-CH 60V 90A DPAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 4,050
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 25 - Jun 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NTD5862N-1G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNTD5862N-1G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NTD5862N-1G, NTD5862N-1G Datasheet (Total Pages: 7, Size: 137.69 KB)
PDFNTD5862N-1G Datasheet Cover
NTD5862N-1G Datasheet Page 2 NTD5862N-1G Datasheet Page 3 NTD5862N-1G Datasheet Page 4 NTD5862N-1G Datasheet Page 5 NTD5862N-1G Datasheet Page 6 NTD5862N-1G Datasheet Page 7

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NTD5862N-1G Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C98A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs5.7mOhm @ 45A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs82nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds6000pF @ 25V
FET Feature-
Power Dissipation (Max)115W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDPAK
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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