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NTD5865N-1G

NTD5865N-1G

For Reference Only

Part Number NTD5865N-1G
PNEDA Part # NTD5865N-1G
Description MOSFET N-CH 60V 43A DPAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 2,808
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 27 - Jul 2 (Choose Expedited Shipping)
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NTD5865N-1G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNTD5865N-1G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NTD5865N-1G, NTD5865N-1G Datasheet (Total Pages: 7, Size: 100.51 KB)
PDFNTD5865NT4G Datasheet Cover
NTD5865NT4G Datasheet Page 2 NTD5865NT4G Datasheet Page 3 NTD5865NT4G Datasheet Page 4 NTD5865NT4G Datasheet Page 5 NTD5865NT4G Datasheet Page 6 NTD5865NT4G Datasheet Page 7

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NTD5865N-1G Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C43A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs18mOhm @ 20A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs23nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1261pF @ 25V
FET Feature-
Power Dissipation (Max)71W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDPAK
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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