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NTDV3055L104-1G

NTDV3055L104-1G

For Reference Only

Part Number NTDV3055L104-1G
PNEDA Part # NTDV3055L104-1G
Description MOSFET N-CH 60V 12A IPAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 8,298
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 27 - Jul 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NTDV3055L104-1G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNTDV3055L104-1G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NTDV3055L104-1G, NTDV3055L104-1G Datasheet (Total Pages: 10, Size: 147.02 KB)
PDFNTDV3055L104-1G Datasheet Cover
NTDV3055L104-1G Datasheet Page 2 NTDV3055L104-1G Datasheet Page 3 NTDV3055L104-1G Datasheet Page 4 NTDV3055L104-1G Datasheet Page 5 NTDV3055L104-1G Datasheet Page 6 NTDV3055L104-1G Datasheet Page 7 NTDV3055L104-1G Datasheet Page 8 NTDV3055L104-1G Datasheet Page 9 NTDV3055L104-1G Datasheet Page 10

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NTDV3055L104-1G Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C12A (Ta)
Drive Voltage (Max Rds On, Min Rds On)5V
Rds On (Max) @ Id, Vgs104mOhm @ 6A, 5V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs20nC @ 5V
Vgs (Max)±15V
Input Capacitance (Ciss) (Max) @ Vds440pF @ 25V
FET Feature-
Power Dissipation (Max)1.5W (Ta), 48W (Tj)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI-PAK
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

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