Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

NTHD4N02FT1G

NTHD4N02FT1G

For Reference Only

Part Number NTHD4N02FT1G
PNEDA Part # NTHD4N02FT1G
Description MOSFET N-CH 20V 2.9A CHIPFET
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 6,156
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 24 - Jun 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NTHD4N02FT1G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNTHD4N02FT1G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NTHD4N02FT1G, NTHD4N02FT1G Datasheet (Total Pages: 6, Size: 72.29 KB)
PDFNTHD4N02FT1G Datasheet Cover
NTHD4N02FT1G Datasheet Page 2 NTHD4N02FT1G Datasheet Page 3 NTHD4N02FT1G Datasheet Page 4 NTHD4N02FT1G Datasheet Page 5 NTHD4N02FT1G Datasheet Page 6

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • NTHD4N02FT1G Datasheet
  • where to find NTHD4N02FT1G
  • ON Semiconductor

  • ON Semiconductor NTHD4N02FT1G
  • NTHD4N02FT1G PDF Datasheet
  • NTHD4N02FT1G Stock

  • NTHD4N02FT1G Pinout
  • Datasheet NTHD4N02FT1G
  • NTHD4N02FT1G Supplier

  • ON Semiconductor Distributor
  • NTHD4N02FT1G Price
  • NTHD4N02FT1G Distributor

NTHD4N02FT1G Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C2.9A (Tj)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Rds On (Max) @ Id, Vgs80mOhm @ 2.9A, 4.5V
Vgs(th) (Max) @ Id1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs4nC @ 4.5V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds300pF @ 10V
FET FeatureSchottky Diode (Isolated)
Power Dissipation (Max)910mW (Tj)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageChipFET™
Package / Case8-SMD, Flat Lead

The Products You May Be Interested In

NTMFS5C410NLTT1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

50A (Ta), 330A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

0.9mOhm @ 50A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

143nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

8862pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.8W (Ta), 167W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

5-DFN (5x6) (8-SOFL)

Package / Case

8-PowerTDFN

FDC3512

ON Semiconductor

Manufacturer

ON Semiconductor

Series

PowerTrench®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

80V

Current - Continuous Drain (Id) @ 25°C

3A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

77mOhm @ 3A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

18nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

634pF @ 40V

FET Feature

-

Power Dissipation (Max)

1.6W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SuperSOT™-6

Package / Case

SOT-23-6 Thin, TSOT-23-6

IRF3708STRLPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

62A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

2.8V, 10V

Rds On (Max) @ Id, Vgs

12mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

24nC @ 4.5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

2417pF @ 15V

FET Feature

-

Power Dissipation (Max)

87W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

MVMBF0201NLT1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

300mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

1Ohm @ 300mA, 10V

Vgs(th) (Max) @ Id

2.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

45pF @ 5V

FET Feature

-

Power Dissipation (Max)

225mW (Ta)

Operating Temperature

-

Mounting Type

Surface Mount

Supplier Device Package

SOT-23-3

Package / Case

TO-236-3, SC-59, SOT-23-3

SIPC03S2N03LX3MA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

*

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

-

Supplier Device Package

-

Package / Case

-

Recently Sold

MAX1619MEE+T

MAX1619MEE+T

Maxim Integrated

SENSOR DIGITAL -55C-125C 16QSOP

LM137K

LM137K

STMicroelectronics

IC REG LINEAR NEG ADJ 1.5A TO3

HSMH-C170

HSMH-C170

Broadcom

LED RED DIFFUSED CHIP SMD

AOZ8903CI

AOZ8903CI

Alpha & Omega Semiconductor

TVS DIODE 5.5V 7V SOT23-6

WSL20108L000FEA

WSL20108L000FEA

Vishay Dale

RES 0.008 OHM 1% 1/2W 2010

EDBA232B2PB-1D-F-D

EDBA232B2PB-1D-F-D

Micron Technology Inc.

IC DRAM 16G PARALLEL 533MHZ

FGH40N60SMD

FGH40N60SMD

ON Semiconductor

IGBT 600V 80A 349W TO-247-3

STPS40170CGY-TR

STPS40170CGY-TR

STMicroelectronics

DIODE ARRAY SCHOTTKY 170V D2PAK

ERJ-M1WSF20MU

ERJ-M1WSF20MU

Panasonic Electronic Components

RES 0.02 OHM 1% 1W 2512

T495D477K006ATE125

T495D477K006ATE125

KEMET

CAP TANT 470UF 10% 6.3V 2917

FDV305N

FDV305N

ON Semiconductor

MOSFET N-CH 20V 0.9A SOT-23

SMF6.0A

SMF6.0A

Littelfuse

TVS DIODE 6V 10.3V SOD123F