NTHL080N120SC1
For Reference Only
| Part Number | NTHL080N120SC1 |
| PNEDA Part # | NTHL080N120SC1 |
| Description | SIC MOS TO247 80MW 1200V |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 9,084 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 3 - May 8 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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NTHL080N120SC1 Resources
| Brand | ON Semiconductor |
| ECAD Module |
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| Mfr. Part Number | NTHL080N120SC1 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
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NTHL080N120SC1 Specifications
| Manufacturer | ON Semiconductor |
| Series | - |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1200V |
| Current - Continuous Drain (Id) @ 25°C | 44A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Rds On (Max) @ Id, Vgs | 110mOhm @ 20A, 20V |
| Vgs(th) (Max) @ Id | 4.3V @ 5mA |
| Gate Charge (Qg) (Max) @ Vgs | 56nC @ 20V |
| Vgs (Max) | +25V, -15V |
| Input Capacitance (Ciss) (Max) @ Vds | 1670pF @ 800V |
| FET Feature | - |
| Power Dissipation (Max) | 348W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247-3 |
| Package / Case | TO-247-3 |
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