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NTHS2101PT1G

NTHS2101PT1G

For Reference Only

Part Number NTHS2101PT1G
PNEDA Part # NTHS2101PT1G
Description MOSFET P-CH 8V 5.4A CHIPFET
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 3,564
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 27 - Jul 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NTHS2101PT1G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNTHS2101PT1G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NTHS2101PT1G, NTHS2101PT1G Datasheet (Total Pages: 6, Size: 54.73 KB)
PDFNTHS2101PT1G Datasheet Cover
NTHS2101PT1G Datasheet Page 2 NTHS2101PT1G Datasheet Page 3 NTHS2101PT1G Datasheet Page 4 NTHS2101PT1G Datasheet Page 5 NTHS2101PT1G Datasheet Page 6

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NTHS2101PT1G Specifications

ManufacturerON Semiconductor
Series-
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)8V
Current - Continuous Drain (Id) @ 25°C5.4A (Tj)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Rds On (Max) @ Id, Vgs25mOhm @ 5.4A, 4.5V
Vgs(th) (Max) @ Id1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs30nC @ 4.5V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds2400pF @ 6.4V
FET Feature-
Power Dissipation (Max)1.3W (Ta)
Operating Temperature-
Mounting TypeSurface Mount
Supplier Device PackageChipFET™
Package / Case8-SMD, Flat Lead

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