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NTJS3151PT1G

NTJS3151PT1G

For Reference Only

Part Number NTJS3151PT1G
PNEDA Part # NTJS3151PT1G
Description MOSFET P-CH 12V 2.7A SOT-363
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 584,076
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 4 - May 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NTJS3151PT1G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNTJS3151PT1G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NTJS3151PT1G, NTJS3151PT1G Datasheet (Total Pages: 5, Size: 123.89 KB)
PDFNTJS3151PT2 Datasheet Cover
NTJS3151PT2 Datasheet Page 2 NTJS3151PT2 Datasheet Page 3 NTJS3151PT2 Datasheet Page 4 NTJS3151PT2 Datasheet Page 5

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NTJS3151PT1G Specifications

ManufacturerON Semiconductor
Series-
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)12V
Current - Continuous Drain (Id) @ 25°C2.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Rds On (Max) @ Id, Vgs60mOhm @ 3.3A, 4.5V
Vgs(th) (Max) @ Id1.2V @ 100µA
Gate Charge (Qg) (Max) @ Vgs8.6nC @ 4.5V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds850pF @ 12V
FET Feature-
Power Dissipation (Max)625mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSC-88/SC70-6/SOT-363
Package / Case6-TSSOP, SC-88, SOT-363

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