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NTLJF3117PT1G

NTLJF3117PT1G

For Reference Only

Part Number NTLJF3117PT1G
PNEDA Part # NTLJF3117PT1G
Description MOSFET P-CH 20V 2.3A 6-WDFN
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 47,760
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NTLJF3117PT1G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNTLJF3117PT1G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NTLJF3117PT1G, NTLJF3117PT1G Datasheet (Total Pages: 8, Size: 143.97 KB)
PDFNTLJF3117PTAG Datasheet Cover
NTLJF3117PTAG Datasheet Page 2 NTLJF3117PTAG Datasheet Page 3 NTLJF3117PTAG Datasheet Page 4 NTLJF3117PTAG Datasheet Page 5 NTLJF3117PTAG Datasheet Page 6 NTLJF3117PTAG Datasheet Page 7 NTLJF3117PTAG Datasheet Page 8

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NTLJF3117PT1G Specifications

ManufacturerON Semiconductor
SeriesµCool™
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C2.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Rds On (Max) @ Id, Vgs100mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs6.2nC @ 4.5V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds531pF @ 10V
FET FeatureSchottky Diode (Isolated)
Power Dissipation (Max)710mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package6-WDFN (2x2)
Package / Case6-WDFN Exposed Pad

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