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NTLJS4159NT1G

NTLJS4159NT1G

For Reference Only

Part Number NTLJS4159NT1G
PNEDA Part # NTLJS4159NT1G
Description MOSFET N-CH 30V 3.6A 6DFN
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 4,248
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 3 - May 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NTLJS4159NT1G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNTLJS4159NT1G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NTLJS4159NT1G, NTLJS4159NT1G Datasheet (Total Pages: 6, Size: 142.64 KB)
PDFNTLJS4159NT1G Datasheet Cover
NTLJS4159NT1G Datasheet Page 2 NTLJS4159NT1G Datasheet Page 3 NTLJS4159NT1G Datasheet Page 4 NTLJS4159NT1G Datasheet Page 5 NTLJS4159NT1G Datasheet Page 6

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NTLJS4159NT1G Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C3.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Rds On (Max) @ Id, Vgs35mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs13nC @ 4.5V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds1045pF @ 15V
FET Feature-
Power Dissipation (Max)700mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package6-WDFN (2x2)
Package / Case6-WDFN Exposed Pad

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