NTLUS3A39PZTBG
For Reference Only
| Part Number | NTLUS3A39PZTBG |
| PNEDA Part # | NTLUS3A39PZTBG |
| Description | MOSFET P-CH 20V 3.4A 6UDFN |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 7,866 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 18 - May 23 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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NTLUS3A39PZTBG Resources
| Brand | ON Semiconductor |
| ECAD Module |
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| Mfr. Part Number | NTLUS3A39PZTBG |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
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NTLUS3A39PZTBG Specifications
| Manufacturer | ON Semiconductor |
| Series | µCool™ |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 3.4A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Rds On (Max) @ Id, Vgs | 39mOhm @ 4A, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 10.4nC @ 4.5V |
| Vgs (Max) | ±8V |
| Input Capacitance (Ciss) (Max) @ Vds | 920pF @ 15V |
| FET Feature | - |
| Power Dissipation (Max) | 600mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 6-UDFN (1.6x1.6) |
| Package / Case | 6-PowerUFDFN |
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Manufacturer Alpha & Omega Semiconductor Inc. Series - FET Type - Technology - Drain to Source Voltage (Vdss) - Current - Continuous Drain (Id) @ 25°C - Drive Voltage (Max Rds On, Min Rds On) - Rds On (Max) @ Id, Vgs - Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) - Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) - Operating Temperature - Mounting Type - Supplier Device Package - Package / Case - |
Manufacturer Diodes Incorporated Series * FET Type - Technology - Drain to Source Voltage (Vdss) - Current - Continuous Drain (Id) @ 25°C - Drive Voltage (Max Rds On, Min Rds On) - Rds On (Max) @ Id, Vgs - Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) - Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) - Operating Temperature - Mounting Type - Supplier Device Package - Package / Case - |
Manufacturer ON Semiconductor Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 10A (Tc) Drive Voltage (Max Rds On, Min Rds On) - Rds On (Max) @ Id, Vgs 200mOhm @ 10A, 5V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V Vgs (Max) - Input Capacitance (Ciss) (Max) @ Vds 1035pF @ 25V FET Feature - Power Dissipation (Max) - Operating Temperature - Mounting Type Surface Mount Supplier Device Package TO-252-3 Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
