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NTMD6601NR2G

NTMD6601NR2G

For Reference Only

Part Number NTMD6601NR2G
PNEDA Part # NTMD6601NR2G
Description MOSFET 2N-CH 80V 1.1A 8SOIC
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 5,706
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Feb 16 - Feb 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NTMD6601NR2G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNTMD6601NR2G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
NTMD6601NR2G, NTMD6601NR2G Datasheet (Total Pages: 6, Size: 95.07 KB)
PDFNTMD6601NR2G Datasheet Cover
NTMD6601NR2G Datasheet Page 2 NTMD6601NR2G Datasheet Page 3 NTMD6601NR2G Datasheet Page 4 NTMD6601NR2G Datasheet Page 5 NTMD6601NR2G Datasheet Page 6

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NTMD6601NR2G Specifications

ManufacturerON Semiconductor
Series-
FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)80V
Current - Continuous Drain (Id) @ 25°C1.1A
Rds On (Max) @ Id, Vgs215mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds400pF @ 25V
Power - Max600mW
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SOIC

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