NTMFS5C604NLT1G-UIL3
For Reference Only
| Part Number | NTMFS5C604NLT1G-UIL3 |
| PNEDA Part # | NTMFS5C604NLT1G-UIL3 |
| Description | MOSFET N-CH 60V 272A |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 4,986 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 14 - Jun 19 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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NTMFS5C604NLT1G-UIL3 Resources
| Brand | ON Semiconductor |
| ECAD Module |
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| Mfr. Part Number | NTMFS5C604NLT1G-UIL3 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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NTMFS5C604NLT1G-UIL3 Specifications
| Manufacturer | ON Semiconductor |
| Series | - |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 40A (Ta), 287A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 1.2mOhm @ 50A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 120nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 8900pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 3.9W (Ta), 200W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Package / Case | 8-PowerTDFN, 5 Leads |
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Manufacturer Nexperia USA Inc. Series Automotive, AEC-Q101, TrenchMOS™ FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 50V Current - Continuous Drain (Id) @ 25°C 180mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 7.5Ohm @ 100mA, 10V Vgs(th) (Max) @ Id 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 0.35nC @ 5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 36pF @ 25V FET Feature - Power Dissipation (Max) 350mW (Ta), 1.14W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-236AB Package / Case TO-236-3, SC-59, SOT-23-3 |
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Manufacturer STMicroelectronics Series MDmesh™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 30A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 120mOhm @ 13A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 106nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 3000pF @ 25V FET Feature - Power Dissipation (Max) 313W (Tc) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247-3 Package / Case TO-247-3 |
