Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

NTMJS1D7N04CTWG

NTMJS1D7N04CTWG

For Reference Only

Part Number NTMJS1D7N04CTWG
PNEDA Part # NTMJS1D7N04CTWG
Description TRENCH 6 40V SL NFET
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 7,920
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 3 - May 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NTMJS1D7N04CTWG Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNTMJS1D7N04CTWG
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NTMJS1D7N04CTWG, NTMJS1D7N04CTWG Datasheet (Total Pages: 6, Size: 130.25 KB)
PDFNTMJS1D7N04CTWG Datasheet Cover
NTMJS1D7N04CTWG Datasheet Page 2 NTMJS1D7N04CTWG Datasheet Page 3 NTMJS1D7N04CTWG Datasheet Page 4 NTMJS1D7N04CTWG Datasheet Page 5 NTMJS1D7N04CTWG Datasheet Page 6

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • NTMJS1D7N04CTWG Datasheet
  • where to find NTMJS1D7N04CTWG
  • ON Semiconductor

  • ON Semiconductor NTMJS1D7N04CTWG
  • NTMJS1D7N04CTWG PDF Datasheet
  • NTMJS1D7N04CTWG Stock

  • NTMJS1D7N04CTWG Pinout
  • Datasheet NTMJS1D7N04CTWG
  • NTMJS1D7N04CTWG Supplier

  • ON Semiconductor Distributor
  • NTMJS1D7N04CTWG Price
  • NTMJS1D7N04CTWG Distributor

NTMJS1D7N04CTWG Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C35A (Ta), 185A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.7mOhm @ 50A, 10V
Vgs(th) (Max) @ Id3.5V @ 130µA
Gate Charge (Qg) (Max) @ Vgs47nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3300pF @ 25V
FET Feature-
Power Dissipation (Max)3.8W (Ta), 106W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-LFPAK
Package / Case8-PowerSMD, Gull Wing

The Products You May Be Interested In

DMN90H8D5HCTI

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

900V

Current - Continuous Drain (Id) @ 25°C

2.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

7Ohm @ 1A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

7.9nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

470pF @ 25V

FET Feature

-

Power Dissipation (Max)

30W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

ITO-220AB

Package / Case

TO-220-3 Full Pack, Isolated Tab

SPP20N60S5HKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

*

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

-

Supplier Device Package

-

Package / Case

-

5HN01C-TB-E

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

Surface Mount

Supplier Device Package

3-CP

Package / Case

TO-236-3, SC-59, SOT-23-3

Manufacturer

IXYS

Series

HiPerFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

170A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

13mOhm @ 85A, 10V

Vgs(th) (Max) @ Id

5V @ 8mA

Gate Charge (Qg) (Max) @ Vgs

434nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

27000pF @ 25V

FET Feature

-

Power Dissipation (Max)

1170W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Chassis Mount

Supplier Device Package

SOT-227B

Package / Case

SOT-227-4, miniBLOC

BSP88H6327XTSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

SIPMOS®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

240V

Current - Continuous Drain (Id) @ 25°C

350mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.8V, 10V

Rds On (Max) @ Id, Vgs

6Ohm @ 350mA, 10V

Vgs(th) (Max) @ Id

1.4V @ 108µA

Gate Charge (Qg) (Max) @ Vgs

6.8nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

95pF @ 25V

FET Feature

-

Power Dissipation (Max)

1.8W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-SOT223-4

Package / Case

TO-261-4, TO-261AA

Recently Sold

LT1167ACS8#PBF

LT1167ACS8#PBF

Linear Technology/Analog Devices

IC INST AMP 1 CIRCUIT 8SO

LTM4625IY#PBF

LTM4625IY#PBF

Linear Technology/Analog Devices

DC DC CONVERTER 0.6-5.5V 5A

TSL2550T

TSL2550T

ams

SENSOR OPT 640NM AMBIENT 4SMD

FSAM30SH60A

FSAM30SH60A

ON Semiconductor

SMART POWER MODULE 30A SPM32-AA

PM200DV1A120

PM200DV1A120

Powerex Inc.

MOD IPM V1 DUAL 200A 1200V

WSLP1206R0500FEA

WSLP1206R0500FEA

Vishay Dale

RES 0.05 OHM 1% 1W 1206

DS9503P+

DS9503P+

Maxim Integrated

TVS DIODE 7.5V 6TSOC

STM6601CM2DDM6F

STM6601CM2DDM6F

STMicroelectronics

IC SUPERVISOR 3.1V 12TDFN

BAT54C

BAT54C

ON Semiconductor

DIODE ARRAY SCHOTTKY 30V SOT23-3

NCP81071BDR2G

NCP81071BDR2G

ON Semiconductor

IC MOSFET DVR HS 5A DUAL 8SOIC

XCF04SVOG20C

XCF04SVOG20C

Xilinx

IC PROM SRL FOR 4M GATE 20-TSSOP

XC2C256-7VQG100I

XC2C256-7VQG100I

Xilinx

IC CPLD 256MC 6.7NS 100VQFP