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NTMS4177PR2G

NTMS4177PR2G

For Reference Only

Part Number NTMS4177PR2G
PNEDA Part # NTMS4177PR2G
Description MOSFET P-CH 30V 6.6A 8-SOIC
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 50,034
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 15 - May 20 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NTMS4177PR2G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNTMS4177PR2G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NTMS4177PR2G, NTMS4177PR2G Datasheet (Total Pages: 5, Size: 121.49 KB)
PDFNTMS4177PR2G Datasheet Cover
NTMS4177PR2G Datasheet Page 2 NTMS4177PR2G Datasheet Page 3 NTMS4177PR2G Datasheet Page 4 NTMS4177PR2G Datasheet Page 5

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NTMS4177PR2G Specifications

ManufacturerON Semiconductor
Series-
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C6.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs12mOhm @ 11.4A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs55nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3100pF @ 24V
FET Feature-
Power Dissipation (Max)840mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SOIC
Package / Case8-SOIC (0.154", 3.90mm Width)

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