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NTMS4935NR2G

NTMS4935NR2G

For Reference Only

Part Number NTMS4935NR2G
PNEDA Part # NTMS4935NR2G
Description MOSFET N-CH 30V 10A 8SOIC
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 6,624
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 13 - May 18 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NTMS4935NR2G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNTMS4935NR2G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NTMS4935NR2G, NTMS4935NR2G Datasheet (Total Pages: 5, Size: 136.56 KB)
PDFNTMS4935NR2G Datasheet Cover
NTMS4935NR2G Datasheet Page 2 NTMS4935NR2G Datasheet Page 3 NTMS4935NR2G Datasheet Page 4 NTMS4935NR2G Datasheet Page 5

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NTMS4935NR2G Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C10A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs5.1mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs52.1nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3639pF @ 25V
FET Feature-
Power Dissipation (Max)810mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SOIC
Package / Case8-SOIC (0.154", 3.90mm Width)

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