NTMSD6N303R2G
For Reference Only
| Part Number | NTMSD6N303R2G |
| PNEDA Part # | NTMSD6N303R2G |
| Description | MOSFET N-CH 30V 6A 8-SOIC |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 5,166 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 6 - May 11 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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NTMSD6N303R2G Resources
| Brand | ON Semiconductor |
| ECAD Module |
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| Mfr. Part Number | NTMSD6N303R2G |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
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NTMSD6N303R2G Specifications
| Manufacturer | ON Semiconductor |
| Series | FETKY™ |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 6A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 32mOhm @ 6A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 30nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 950pF @ 24V |
| FET Feature | Schottky Diode (Isolated) |
| Power Dissipation (Max) | 2W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SOIC |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
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