NTMYS2D2N06CLTWG
For Reference Only
| Part Number | NTMYS2D2N06CLTWG |
| PNEDA Part # | NTMYS2D2N06CLTWG |
| Description | TRENCH 6 40V SL NFET |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 3,996 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 9 - May 14 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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NTMYS2D2N06CLTWG Resources
| Brand | ON Semiconductor |
| ECAD Module |
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| Mfr. Part Number | NTMYS2D2N06CLTWG |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
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NTMYS2D2N06CLTWG Specifications
| Manufacturer | ON Semiconductor |
| Series | - |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 31A (Ta), 185A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 1.9mOhm @ 50A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 180µA |
| Gate Charge (Qg) (Max) @ Vgs | 69nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 4850pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 3.9W (Ta), 134W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | LFPAK4 (5x6) |
| Package / Case | SOT-1023, 4-LFPAK |
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Manufacturer Rohm Semiconductor Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 7.5A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4V, 10V Rds On (Max) @ Id, Vgs 21mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 21nC @ 5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1900pF @ 10V FET Feature - Power Dissipation (Max) 2W (Ta) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package MPT6 Package / Case 6-SMD, Flat Leads |
