NTMYS3D3N06CLTWG
For Reference Only
| Part Number | NTMYS3D3N06CLTWG |
| PNEDA Part # | NTMYS3D3N06CLTWG |
| Description | MOSFET N-CH 60V 100A |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 3,294 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 22 - May 27 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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NTMYS3D3N06CLTWG Resources
| Brand | ON Semiconductor |
| ECAD Module |
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| Mfr. Part Number | NTMYS3D3N06CLTWG |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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NTMYS3D3N06CLTWG Specifications
| Manufacturer | ON Semiconductor |
| Series | - |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 26A (Ta), 133A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 3mOhm @ 50A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 40.7nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2880pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 3.9W (Ta), 100W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | LFPAK4 (5x6) |
| Package / Case | - |
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Manufacturer Rohm Semiconductor Series - FET Type N-Channel Technology SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss) 1200V Current - Continuous Drain (Id) @ 25°C 22A (Tc) Drive Voltage (Max Rds On, Min Rds On) 18V Rds On (Max) @ Id, Vgs 208mOhm @ 7A, 18V Vgs(th) (Max) @ Id 4V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs 62nC @ 18V Vgs (Max) +22V, -6V Input Capacitance (Ciss) (Max) @ Vds 1200pF @ 800V FET Feature - Power Dissipation (Max) 165W (Tc) Operating Temperature 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247 Package / Case TO-247-3 |
Manufacturer ON Semiconductor Series SuperFET® III FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 6A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 600mOhm @ 3A, 10V Vgs(th) (Max) @ Id 4.5V @ 600µA Gate Charge (Qg) (Max) @ Vgs 11nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 465pF @ 400V FET Feature - Power Dissipation (Max) 54W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package D-PAK (TO-252) Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Manufacturer Nexperia USA Inc. Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 100A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 3mOhm @ 25A, 10V Vgs(th) (Max) @ Id 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs 130nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 8079pF @ 30V FET Feature - Power Dissipation (Max) 306W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package I2PAK Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA |
