Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

NTP8G202NG

NTP8G202NG

For Reference Only

Part Number NTP8G202NG
PNEDA Part # NTP8G202NG
Description MOSFET N-CH 600V 9A TO220
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 4,608
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 15 - Jun 20 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NTP8G202NG Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNTP8G202NG
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NTP8G202NG, NTP8G202NG Datasheet (Total Pages: 6, Size: 108.64 KB)
PDFNTP8G202NG Datasheet Cover
NTP8G202NG Datasheet Page 2 NTP8G202NG Datasheet Page 3 NTP8G202NG Datasheet Page 4 NTP8G202NG Datasheet Page 5 NTP8G202NG Datasheet Page 6

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • NTP8G202NG Datasheet
  • where to find NTP8G202NG
  • ON Semiconductor

  • ON Semiconductor NTP8G202NG
  • NTP8G202NG PDF Datasheet
  • NTP8G202NG Stock

  • NTP8G202NG Pinout
  • Datasheet NTP8G202NG
  • NTP8G202NG Supplier

  • ON Semiconductor Distributor
  • NTP8G202NG Price
  • NTP8G202NG Distributor

NTP8G202NG Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
TechnologyGaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)8V
Rds On (Max) @ Id, Vgs350mOhm @ 5.5A, 8V
Vgs(th) (Max) @ Id2.6V @ 500µA
Gate Charge (Qg) (Max) @ Vgs9.3nC @ 4.5V
Vgs (Max)±18V
Input Capacitance (Ciss) (Max) @ Vds760pF @ 400V
FET Feature-
Power Dissipation (Max)65W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220-3
Package / CaseTO-220-3

The Products You May Be Interested In

SPP20N60S5HKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

*

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

-

Supplier Device Package

-

Package / Case

-

IPP041N04NGXKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

80A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

4.1mOhm @ 80A, 10V

Vgs(th) (Max) @ Id

4V @ 45µA

Gate Charge (Qg) (Max) @ Vgs

56nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4500pF @ 20V

FET Feature

-

Power Dissipation (Max)

94W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO220-3-1

Package / Case

TO-220-3

NTB125N02R

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

24V

Current - Continuous Drain (Id) @ 25°C

95A (Ta), 120.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

4.6mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

28nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3440pF @ 20V

FET Feature

-

Power Dissipation (Max)

1.98W (Ta), 113.6W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IPB083N10N3GATMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

80A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

8.3mOhm @ 73A, 10V

Vgs(th) (Max) @ Id

3.5V @ 75µA

Gate Charge (Qg) (Max) @ Vgs

55nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3980pF @ 50V

FET Feature

-

Power Dissipation (Max)

125W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D²PAK (TO-263AB)

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

SQM40014EM_GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

Automotive, AEC-Q101, TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

200A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1mOhm @ 35A, 10V

Vgs(th) (Max) @ Id

3.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

250nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

15525pF @ 25V

FET Feature

-

Power Dissipation (Max)

375W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-263-7

Package / Case

TO-263-7, D²Pak (6 Leads + Tab)

Recently Sold

WSL25122L000FEA

WSL25122L000FEA

Vishay Dale

RES 0.002 OHM 1% 1W 2512

MC7808CDTG

MC7808CDTG

ON Semiconductor

IC REG LINEAR 8V 1A DPAK

BLM31PG391SN1L

BLM31PG391SN1L

Murata

FERRITE BEAD 390 OHM 1206 1LN

MAX8556ETE+

MAX8556ETE+

Maxim Integrated

IC REG LINEAR POS ADJ 4A 16TQFN

PIC12F629-I/SN

PIC12F629-I/SN

Microchip Technology

IC MCU 8BIT 1.75KB FLASH 8SOIC

MMBT3904-7-F

MMBT3904-7-F

Diodes Incorporated

TRANS NPN 40V 0.2A SMD SOT23-3

SI9706DY-T1-E3

SI9706DY-T1-E3

Vishay Siliconix

IC PCMCIA INTFACE SW 8SO

ADG1433YRUZ

ADG1433YRUZ

Analog Devices

IC SWITCH TRIPLE SPDT 16TSSOP

744774047

744774047

Wurth Electronics

FIXED IND 4.7UH 3A 71 MOHM SMD

0251007.NRT1L

0251007.NRT1L

Littelfuse

FUSE BRD MNT 7A 125VAC/VDC AXIAL

A42MX09-PQ100

A42MX09-PQ100

Microsemi

IC FPGA 83 I/O 100QFP

MAX15021ATI+T

MAX15021ATI+T

Maxim Integrated

IC REG BUCK ADJ 2A/4A DL 28TQFN