Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

NTR1P02LT1G

NTR1P02LT1G

For Reference Only

Part Number NTR1P02LT1G
PNEDA Part # NTR1P02LT1G
Description MOSFET P-CH 20V 1.3A SOT-23
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 711,030
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 27 - Jul 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NTR1P02LT1G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNTR1P02LT1G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NTR1P02LT1G, NTR1P02LT1G Datasheet (Total Pages: 5, Size: 117.93 KB)
PDFNTR1P02LT3G Datasheet Cover
NTR1P02LT3G Datasheet Page 2 NTR1P02LT3G Datasheet Page 3 NTR1P02LT3G Datasheet Page 4 NTR1P02LT3G Datasheet Page 5

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • NTR1P02LT1G Datasheet
  • where to find NTR1P02LT1G
  • ON Semiconductor

  • ON Semiconductor NTR1P02LT1G
  • NTR1P02LT1G PDF Datasheet
  • NTR1P02LT1G Stock

  • NTR1P02LT1G Pinout
  • Datasheet NTR1P02LT1G
  • NTR1P02LT1G Supplier

  • ON Semiconductor Distributor
  • NTR1P02LT1G Price
  • NTR1P02LT1G Distributor

NTR1P02LT1G Specifications

ManufacturerON Semiconductor
Series-
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C1.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Rds On (Max) @ Id, Vgs220mOhm @ 750mA, 4.5V
Vgs(th) (Max) @ Id1.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs5.5nC @ 4V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds225pF @ 5V
FET Feature-
Power Dissipation (Max)400mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-23-3 (TO-236)
Package / CaseTO-236-3, SC-59, SOT-23-3

The Products You May Be Interested In

IPB054N08N3GATMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

80V

Current - Continuous Drain (Id) @ 25°C

80A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

5.4mOhm @ 80A, 10V

Vgs(th) (Max) @ Id

3.5V @ 90µA

Gate Charge (Qg) (Max) @ Vgs

69nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4750pF @ 40V

FET Feature

-

Power Dissipation (Max)

150W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D²PAK (TO-263AB)

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IPU135N03L G

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

30A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

13.5mOhm @ 30A, 10V

Vgs(th) (Max) @ Id

2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

10nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1000pF @ 15V

FET Feature

-

Power Dissipation (Max)

31W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO251-3

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA

BSC084P03NS3GATMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

14.9A (Ta), 78.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

8.4mOhm @ 50A, 10V

Vgs(th) (Max) @ Id

3.1V @ 105µA

Gate Charge (Qg) (Max) @ Vgs

58nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

4785pF @ 15V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta), 69W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TDSON-8-5

Package / Case

8-PowerTDFN

BUK7640-100A,118

Nexperia

Manufacturer

Nexperia USA Inc.

Series

Automotive, AEC-Q101, TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

37A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

40mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2293pF @ 25V

FET Feature

-

Power Dissipation (Max)

138W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

C3M0120090J-TR

Cree/Wolfspeed

Manufacturer

Cree/Wolfspeed

Series

C3M™

FET Type

N-Channel

Technology

SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss)

900V

Current - Continuous Drain (Id) @ 25°C

22A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

15V

Rds On (Max) @ Id, Vgs

155mOhm @ 15A, 15V

Vgs(th) (Max) @ Id

3.5V @ 3mA

Gate Charge (Qg) (Max) @ Vgs

17.3nC @ 15V

Vgs (Max)

+18V, -8V

Input Capacitance (Ciss) (Max) @ Vds

350pF @ 600V

FET Feature

-

Power Dissipation (Max)

83W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK-7

Package / Case

TO-263-8, D²Pak (7 Leads + Tab), TO-263CA

Recently Sold

AD7923BRUZ

AD7923BRUZ

Analog Devices

IC ADC 12BIT SAR 16TSSOP

CM200C32768AZFT

CM200C32768AZFT

Citizen Finedevice

CRYSTAL 32.7680KHZ 12.5PF SMD

SD101CW-7-F

SD101CW-7-F

Diodes Incorporated

DIODE SCHOTTKY 40V 15MA SOD123

TAJD337K010RNJ

TAJD337K010RNJ

CAP TANT 330UF 10% 10V 2917

MP3V5004GP

MP3V5004GP

NXP

IC PRESSURE SENSOR 8-SOP

SCMT22F505PRBA0

SCMT22F505PRBA0

CAPACITOR 5F 20% 5.5V THRU HOLE

W25Q64DWSSIG

W25Q64DWSSIG

Winbond Electronics

IC FLASH 64M SPI 104MHZ 8SOIC

1N5819HW-7-F

1N5819HW-7-F

Diodes Incorporated

DIODE SCHOTTKY 40V 1A SOD123

MAX3387EEUG

MAX3387EEUG

Maxim Integrated

IC TRANSCEIVER FULL 3/3 24TSSOP

EP1C20F324C7

EP1C20F324C7

Intel

IC FPGA 233 I/O 324FBGA

PIC16F690-I/SS

PIC16F690-I/SS

Microchip Technology

IC MCU 8BIT 7KB FLASH 20SSOP

VN10LP

VN10LP

Diodes Incorporated

MOSFET N-CH 60V 270MA TO92-3