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NTR2101PT1G

NTR2101PT1G

For Reference Only

Part Number NTR2101PT1G
PNEDA Part # NTR2101PT1G
Description MOSFET P-CH 8V 3.7A SOT-23
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 717,336
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 1 - May 6 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NTR2101PT1G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNTR2101PT1G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NTR2101PT1G, NTR2101PT1G Datasheet (Total Pages: 6, Size: 125.91 KB)
PDFNTR2101PT1 Datasheet Cover
NTR2101PT1 Datasheet Page 2 NTR2101PT1 Datasheet Page 3 NTR2101PT1 Datasheet Page 4 NTR2101PT1 Datasheet Page 5 NTR2101PT1 Datasheet Page 6

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NTR2101PT1G Specifications

ManufacturerON Semiconductor
Series-
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)8V
Current - Continuous Drain (Id) @ 25°C-
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Rds On (Max) @ Id, Vgs52mOhm @ 3.5A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs15nC @ 4.5V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds1173pF @ 4V
FET Feature-
Power Dissipation (Max)960mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-23-3 (TO-236)
Package / CaseTO-236-3, SC-59, SOT-23-3

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