Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

NTRV4101PT1G

NTRV4101PT1G

For Reference Only

Part Number NTRV4101PT1G
PNEDA Part # NTRV4101PT1G
Description MOSFET P-CH 20V 1.8A SOT-23-3
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 7,182
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jul 9 - Jul 14 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NTRV4101PT1G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNTRV4101PT1G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NTRV4101PT1G, NTRV4101PT1G Datasheet (Total Pages: 6, Size: 212.65 KB)
PDFNTRV4101PT1G Datasheet Cover
NTRV4101PT1G Datasheet Page 2 NTRV4101PT1G Datasheet Page 3 NTRV4101PT1G Datasheet Page 4 NTRV4101PT1G Datasheet Page 5 NTRV4101PT1G Datasheet Page 6

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • NTRV4101PT1G Datasheet
  • where to find NTRV4101PT1G
  • ON Semiconductor

  • ON Semiconductor NTRV4101PT1G
  • NTRV4101PT1G PDF Datasheet
  • NTRV4101PT1G Stock

  • NTRV4101PT1G Pinout
  • Datasheet NTRV4101PT1G
  • NTRV4101PT1G Supplier

  • ON Semiconductor Distributor
  • NTRV4101PT1G Price
  • NTRV4101PT1G Distributor

NTRV4101PT1G Specifications

ManufacturerON Semiconductor
Series-
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C1.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Rds On (Max) @ Id, Vgs85mOhm @ 1.6A, 4.5V
Vgs(th) (Max) @ Id1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs8.5nC @ 4.5V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds675pF @ 10V
FET Feature-
Power Dissipation (Max)420mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-23-3 (TO-236)
Package / CaseTO-236-3, SC-59, SOT-23-3

The Products You May Be Interested In

STWA68N60M6

STMicroelectronics

Manufacturer

STMicroelectronics

Series

MDmesh™ M6

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

63A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

41mOhm @ 31.5A, 10V

Vgs(th) (Max) @ Id

4.75V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

106nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

4360pF @ 100V

FET Feature

-

Power Dissipation (Max)

390W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247 Long Leads

Package / Case

TO-247-3

AOB256L

Alpha & Omega Semiconductor

Manufacturer

Alpha & Omega Semiconductor Inc.

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

150V

Current - Continuous Drain (Id) @ 25°C

3A (Ta), 19A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

85mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

2.8V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

22nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1165pF @ 75V

FET Feature

-

Power Dissipation (Max)

2.1W (Ta), 83W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-263 (D²Pak)

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

AON7526

Alpha & Omega Semiconductor

Manufacturer

Alpha & Omega Semiconductor Inc.

Series

*

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

-

Supplier Device Package

-

Package / Case

-

5LP01C-TB-E

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

50V

Current - Continuous Drain (Id) @ 25°C

70mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.5V, 4V

Rds On (Max) @ Id, Vgs

23Ohm @ 40mA, 4V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

1.4nC @ 10V

Vgs (Max)

±10V

Input Capacitance (Ciss) (Max) @ Vds

7.4pF @ 10V

FET Feature

-

Power Dissipation (Max)

250mW (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

3-CP

Package / Case

TO-236-3, SC-59, SOT-23-3

IRLR3105PBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

25A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Rds On (Max) @ Id, Vgs

37mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

20nC @ 5V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

710pF @ 25V

FET Feature

-

Power Dissipation (Max)

57W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D-Pak

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Recently Sold

AD8051ARTZ-REEL7

AD8051ARTZ-REEL7

Analog Devices

IC OPAMP VFB 1 CIRCUIT SOT23-5

WSL120600000ZEA9

WSL120600000ZEA9

Vishay Dale

RES 0 OHM JUMPER 1206

AOZ1284PI

AOZ1284PI

Alpha & Omega Semiconductor

IC REG BUCK ADJUSTABLE 4A 8SO

7443556350

7443556350

Wurth Electronics

FIXED IND 3.5UH 22.5A 3.1 MOHM

XU208-128-TQ64-C10

XU208-128-TQ64-C10

XMOS

IC MCU 32BIT ROMLESS 64TQFP

MAX531BCPD

MAX531BCPD

Maxim Integrated

IC DAC 12BIT V-OUT 14DIP

S34ML08G101BHI000

S34ML08G101BHI000

SkyHigh Memory Limited

IC FLASH 8G PARALLEL 63BGA

RB751S40

RB751S40

ON Semiconductor

DIODE SCHOTTKY 40V 30MA SOD523F

S25FL208K0RMFI041

S25FL208K0RMFI041

Cypress Semiconductor

IC FLASH 8M SPI 76MHZ 8SOIC

LTC2977IUP#PBF

LTC2977IUP#PBF

Linear Technology/Analog Devices

IC PWR SUPP CTRLR MONITOR 64QFN

PEX8734-AB80BI G

PEX8734-AB80BI G

Broadcom

PEX8734-AB80BI G

V7-7B17D8-201

V7-7B17D8-201

Honeywell Sensing and Productivity Solutions

SWITCH SNAP ACTION SPDT 11A 125V