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NTRV4101PT1G

NTRV4101PT1G

For Reference Only

Part Number NTRV4101PT1G
PNEDA Part # NTRV4101PT1G
Description MOSFET P-CH 20V 1.8A SOT-23-3
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 7,182
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 7 - May 12 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NTRV4101PT1G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNTRV4101PT1G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NTRV4101PT1G, NTRV4101PT1G Datasheet (Total Pages: 6, Size: 212.65 KB)
PDFNTRV4101PT1G Datasheet Cover
NTRV4101PT1G Datasheet Page 2 NTRV4101PT1G Datasheet Page 3 NTRV4101PT1G Datasheet Page 4 NTRV4101PT1G Datasheet Page 5 NTRV4101PT1G Datasheet Page 6

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NTRV4101PT1G Specifications

ManufacturerON Semiconductor
Series-
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C1.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Rds On (Max) @ Id, Vgs85mOhm @ 1.6A, 4.5V
Vgs(th) (Max) @ Id1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs8.5nC @ 4.5V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds675pF @ 10V
FET Feature-
Power Dissipation (Max)420mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-23-3 (TO-236)
Package / CaseTO-236-3, SC-59, SOT-23-3

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