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NVB25P06T4G

NVB25P06T4G

For Reference Only

Part Number NVB25P06T4G
PNEDA Part # NVB25P06T4G
Description MOSFET P-CH 60V 27.5A D2PAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 5,418
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
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NVB25P06T4G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNVB25P06T4G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NVB25P06T4G, NVB25P06T4G Datasheet (Total Pages: 6, Size: 117.56 KB)
PDFNVB25P06T4G Datasheet Cover
NVB25P06T4G Datasheet Page 2 NVB25P06T4G Datasheet Page 3 NVB25P06T4G Datasheet Page 4 NVB25P06T4G Datasheet Page 5 NVB25P06T4G Datasheet Page 6

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NVB25P06T4G Specifications

ManufacturerON Semiconductor
Series-
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C27.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs82mOhm @ 25A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs50nC @ 10V
Vgs (Max)±15V
Input Capacitance (Ciss) (Max) @ Vds1680pF @ 25V
FET Feature-
Power Dissipation (Max)120W (Tj)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD2PAK
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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